Cutting-edge mid-wavelength infrared (MWIR) sensing technologies leverage infrared photodetectors, memory units, and computing units to enhance machine vision. Real-time processing and decision-making challenges emerge with the increasing number of intelligent pixels. However, current operations are limited to in-sensor computing capabilities for near-infrared technology, and high-performance MWIR detectors for multi-state switching functions are lacking. Here, we demonstrate a non-volatile MoS₂/black phosphorus (BP) heterojunction MWIR photovoltaic detector featuring a semi-floating gate structure design, integrating near- to mid-infrared photodetection, memory and computing (PMC) functionalities. The PMC device exhibits the property of being able to store a stable responsivity, which varies linearly with the stored conductance state. Significantly, device weights (stable responsivity) can be programmed with power consumption as low as 1.8 fJ, and the blackbody peak responsivity can reach 1.68 A/W for the MWIR band. In the simulation of Faster Region with convolution neural network (CNN) based on the FLIR dataset, the PMC hardware responsivity weights can reach 89% mean Average Precision index of the feature extraction network software weights. This MWIR photovoltaic detector, with its versatile functionalities, holds significant promise for applications in advanced infrared object detection and recognition systems.

In-sensor processing has the potential to reduce the energy consumption and hardware complexity of motion detection and recognition. However, the state-of-the-art all-in-one array integration technologies with simultaneous broadband spectrum image capture (sensory), image memory (storage) and image processing (computation) functions are still insufficient. Here, macroscale (2 × 2 mm²) integration of a rippled-assisted optoelectronic array (18 × 18 pixels) for all-day motion detection and recognition. The rippled-assisted optoelectronic array exhibits remarkable uniformity in the memory window, optically stimulated non-volatile positive and negative photoconductance. Importantly, the array achieves an extensive optical storage dynamic range exceeding 10⁶, and exceptionally high room-temperature mobility up to 406.7 cm² V⁻¹ s⁻¹, four times higher than the International Roadmap for Device and Systems 2028 target. Additionally, the spectral range of each rippled-assisted optoelectronic processor covers visible to near-infrared (405 nm–940 nm), achieving function of motion detection and recognition.

Present vision restoration technologies have substantial constraints that limit their application in the clinical setting. In this work, we fabricated a subretinal nanoprosthesis using tellurium nanowire networks (TeNWNs) that converts light of both the visible and near-infrared–II spectra into electrical signals. The broad-spectrum coverage is made possible by a combination of narrow bandgaps, strong absorption, and engineered asymmetries. Implanted into blind mice, the TeNWNs restored pupillary reflexes and enabled visually cued learning under visible and near-infrared 1550-nanometer light. In nonhuman primates, TeNWNs elicited robust retina-derived neural responses, confirming biocompatibility and feasibility. By restoring lost photosensitivity and extending vision to near-infrared, this nanoprosthesis offers a promising approach for restoring vision.

The pursuit of non-volatile memory with program speeds below one nanosecond, beyond the capabilities of non-volatile flash and high-speed volatile static random-access memory, remains a longstanding challenge in the field of memory technology¹. Utilizing fundamental physics innovation enabled by advanced materials, series of emerging memories^2,3,4,5 are being developed to overcome the speed bottleneck of non-volatile memory. As the most extensively applied non-volatile memory, the speed of flash is limited by the low efficiency of the electric-field-assisted program, with reported speeds^6,7,8,9,10 much slower than sub-one nanosecond. Here we report a two-dimensional Dirac graphene-channel flash memory based on a two-dimensional-enhanced hot-carrier-injection mechanism, supporting both electron and hole injection. The Dirac channel flash shows a program speed of 400 picoseconds, non-volatile storage and robust endurance over 5.5 × 10⁶ cycles. Our results confirm that the thin-body channel can optimize the horizontal electric-field (E_y) distribution, and the improved E_y-assisted program efficiency increases the injection current to 60.4 pA μm⁻¹ at |V_DS| = 3.7 V. We also find that the two-dimensional semiconductor tungsten diselenide has two-dimensional-enhanced hot-hole injection, but with different injection behaviour. This work demonstrates that the speed of non-volatile flash memory can exceed that of the fastest volatile static random-access memory with the same channel length.

Passive imaging for mid-wave infrared (MWIR) is resistant to atmospheric pollutants, guaranteeing image clarity and accuracy. Arrayed photodetectors can simultaneously perform radiation sensing to improve efficiency. Room temperature van der Waals (vdWs) photodetectors without lattice matching have evolved rapidly with optimized stacking methods, primarily for single-pixel devices. The urgent need to implement arrayed devices aligns with practical demands. Here, we present an 8 by 1 black phosphorus/molybdenum sulfide (BP/MoS ₂ ) vdWs photodetector linear array with a fill-factor of ~77%, fabricated using a temperature-assisted sloping transfer method. The flat interface and uniform thickness facilitate carrier transport and minimize pixel nonuniformities, showing an average peak detectivity ( D ^* ) of 2.34 × 10 ⁹ cm·Hz ^1/2 ·W ⁻¹ in the mid-wave infrared region. Compared to a single pixel, push-broom scanning passive imaging is eight times more efficient and further enhanced through mean filtering and fast Fourier transform filtering for strip noise correction. Our study offers guidance on vdWs arrayed devices for engineering applications.

Two-dimensional (2D) materials have extended the device scalability^1,2,3 of silicon (Si) technology and enabled fundamental innovations in device mechanisms^4,5,6. Both industry^7,8,9 and academia^10,11,12,13, particularly in the field of integrated circuits, are pursuing integration breakthroughs to demonstrate the superiority of 2D electronics at the system level. Despite considerable integration progress on either 2D material integration^11,12,13 or 2D-CMOS hybrid integration¹⁴, a system that can migrate the advantages of the device to the application is still lacking. Here we report a full-featured 2D NOR flash memory chip realized by an atomic device to chip (ATOM2CHIP) technology, which combines a superior 2D electronic device as a memory core and a powerful CMOS platform to support complex instruction control. The ATOM2CHIP blueprint includes a full-stack on-chip process and a cross-platform system design, providing a complete framework to bridge the gap from emerging device concept to an applicable chip. The full-stack on-chip process is a specially designed flow that incorporates planar integration, three-dimensional (3D) architecture and chip packaging, contributing to a high yield of 94.34% based on a full-chip test. The cross-platform system design handles both the 2D circuit design and the 2D-CMOS modules compatibility verification design, contributing to a highly complex, instruction-driven, full-featured chip with 8-bit commands and 32-bit parallelism. These results demonstrate an efficient system integration strategy that showcases the advantages of the 2D electronic system.