Peng Wang

Prof. Peng Wang

State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,, Shanghai, China
orcid

Research Focus & Metrics

Academic Career Length

17Years (2010-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

View All Publications
3 September 2018 in Advanced Functional Materials
Verified
Journal Article
Closed access
PDF file
Mingsheng LongMingsheng Long
Mingsheng Long
Peng WangPeng Wang
Peng Wang
HFHehai Fang
Hehai Fang
Weida HuWeida Hu
Weida Hu

16 September 2015 in Advanced Materials
Verified
Journal Article
Closed access
PDF file
XWXudong Wang
Xudong Wang
Peng WangPeng Wang
Peng Wang
JWJianlu Wang
Jianlu Wang
Weida HuWeida Hu
Weida Hu
XZXiaohao Zhou
Xiaohao Zhou
JCJunhao Chu
Junhao Chu

25 May 2021 in Nature Electronics
Verified
Journal Article
Closed access
PDF file
YCYunfeng Chen
Yunfeng Chen
YWYang Wang
Yang Wang
ZWZhen Wang
Zhen Wang
YGYue Gu
Yue Gu
YYYan Ye
Yan Ye
Weida HuWeida Hu
Weida Hu

2 June 2017 in Science Advances
Verified
Journal Article
Open access
PDF file
MLMingsheng Long
Mingsheng Long
AGAnyuan Gao
Anyuan Gao
Peng WangPeng Wang
Peng Wang
HXHui Xia
Hui Xia
COClaudia Ott
Claudia Ott
FMFeng Miao
Feng Miao
The mid-infrared (MIR) spectral range, pertaining to important applications, such as molecular “fingerprint” imaging, remote sensing, free space telecommunication, and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high-cost photodetectors requiring cryogenic operation. We report black arsenic phosphorus–based long-wavelength IR photodetectors, with room temperature operation up to 8.2 μm, entering the second MIR atmospheric transmission window. Combined with a van der Waals heterojunction, room temperature–specific detectivity higher than 4.9 × 109 Jones was obtained in the 3- to 5-μm range. The photodetector works in a zero-bias photovoltaic mode, enabling fast photoresponse and low dark noise. Our van der Waals heterojunction photodetectors not only exemplify black arsenic phosphorus as a promising candidate for MIR optoelectronic applications but also pave the way for a general strategy to suppress 1/f noise in photonic devices.

9 March 2016 in ACS Nano
Verified
Journal Article
Closed access
KZKenan Zhang
Kenan Zhang
TZTianning Zhang
Tianning Zhang
GCGuanghui Cheng
Guanghui Cheng
TLTianxin Li
Tianxin Li
SWShuxia Wang
Shuxia Wang
NDNing Dai
Ning Dai

8 May 2020 in Nature Communications
Verified
Journal Article
Open access
PDF file
LTLei Tong
Lei Tong
XHXinyu Huang
Xinyu Huang
Peng WangPeng Wang
Peng Wang
LYLei Ye
Lei Ye
MPMeng Peng
Meng Peng
Weida HuWeida Hu
Weida Hu
Next-generation polarized mid-infrared imaging systems generally requires miniaturization, integration, flexibility, good workability at room temperature and in severe environments, etc. Emerging two-dimensional materials provide another route to meet these demands, due to the ease of integrating on complex structures, their native in-plane anisotropy crystal structure for high polarization photosensitivity, and strong quantum confinement for excellent photodetecting performances at room temperature. However, polarized infrared imaging under scattering based on 2D materials has yet to be realized. Here we report the systematic investigation of polarized infrared imaging for a designed target obscured by scattering media using an anisotropic tellurium photodetector. Broadband sensitive photoresponse is realized at room temperature, with excellent stability without degradation under ambient atmospheric conditions. Significantly, a large anisotropic ratio of tellurium ensures polarized imaging in a scattering environment, with the degree of linear polarization over 0.8, opening up possibilities for developing next-generation polarized mid-infrared imaging technology.