Mid-infrared (MIR) intelligent sensing technology is essential for precise identification and tracking for dynamic target detection in challenging and low-visibility environments. However, existing MIR vision systems based on traditional von Neumann architecture face significant delays and inefficiencies due to the separation of sensing, memory, and processing units. Neuromorphic motion devices offer better tracking capabilities, but most studies are limited to the near-infrared spectrum. Inspired by the fire beetle’s MIR sensing capabilities, we have developed an MIR neuromorphic device using a 2D inorganic/organic heterostructure. The device exhibits biological synaptic behavior in the MIR region (up to 4.25 μm) based on the persistent photoconductivity (PPC) effect, successfully realizing the function of dynamic trajectories memorization with real-time hardware implementation. Additionally, a reservoir computing (RC) system trained on an MIR flame motion dataset achieves a recognition accuracy of 94.79% in classifying flame motion direction. While the research on MIR neuromorphic devices is limited, this study underscores the potential of such devices to advance MIR-based machine vision applications.

Avalanche or carrier-multiplication effect, based on impact ionization processes in semiconductors, has a great potential for enhancing the performance of photodetector and solar cells. However, in practical applications, it suffers from high threshold energy, reducing the advantages of carrier multiplication. Here, we report on a low-threshold avalanche effect in a stepwise WSe₂ structure, in which the combination of weak electron-phonon scattering and high electric fields leads to a low-loss carrier acceleration and multiplication. Owing to this effect, the room-temperature threshold energy approaches the fundamental limit, E_thre ≈ E_g, where E_g is the bandgap of the semiconductor. Our findings offer an alternative perspective on the design and fabrication of future avalanche and hot-carrier photovoltaic devices.

Blackbody-sensitive room-temperature photodetectors with ultrabroadband response from the short to very long-wave infrared (VLWIR) range are highly desirable for optical communication, industrial gas leakage detection, night vision, and atmosphere surveillance. Although two-dimensional (2D) semiconductors with narrow bandgaps have shown promise in uncooled short and mid-wave infrared (SWIR and MWIR) detection, achieving blackbody responses extending to long-wave infrared (LWIR) or even the VLWIR region at room temperature remains a challenge. Here, we report a bioinspired room-temperature blackbody-sensitive self-adapted ultrabroadband detector utilizing the 2D flat-band quantum material Nb₃I₈, engineered through an electronic and phononic band strategy. Our study reveals that Nb₃I₈ exhibits enhanced SWIR absorption due to electron flat-bands induced high density of states (DOS) and dipole transition probability. Owing to its strong anharmonicity with phonon flat-band characteristics, the phonon propagation is prohibited, which contributes to low thermal conductivity and enhances the heat localization, resulting in a sensitive bolometric response to blackbody radiation from λ = 2.5 μm to 20 μm. Our work not only represents a breakthrough for 2D materials with room-temperature LWIR–VLWIR blackbody detection ability, but also paves the way for implementing blackbody-sensitive ultrabroadband photodetectors by exploiting flat-band quantum materials.