The mechanism of ablation of solids by intense femtosecond laser pulses is described in an explicit analytical form. It is shown that at high intensities when the ionization of the target material is complete before the end of the pulse, the ablation mechanism is the same for both metals and dielectrics. The physics of this new ablation regime involves ion acceleration in the electrostatic field caused by charge separation created by energetic electrons escaping from the target. The formulas for ablation thresholds and ablation rates for metals and dielectrics, combining the laser and target parameters, are derived and compared to experimental data. The calculated dependence of the ablation thresholds on the pulse duration is in agreement with the experimental data in a femtosecond range, and it is linked to the dependence for nanosecond pulses.

It has been a long-standing challenge to produce air-stable few- or monolayer samples of phosphorene because thin phosphorene films degrade rapidly in ambient conditions. Here we demonstrate a new highly controllable method for fabricating high quality, air-stable phosphorene films with a designated number of layers ranging from a few down to monolayer. Our approach involves the use of oxygen plasma dry etching to thin down thick-exfoliated phosphorene flakes, layer by layer with atomic precision. Moreover, in a stabilized phosphorene monolayer, we were able to precisely engineer defects for the first time, which led to efficient emission of photons at new frequencies in the near infrared at room temperature. In addition, we demonstrate the use of an electrostatic gate to tune the photon emission from the defects in a monolayer phosphorene. This could lead to new electronic and optoelectronic devices, such as electrically tunable, broadband near infrared lighting devices operating at room temperature.

Extremely high pressures ($\sim 10\mathrm{TPa}$) and temperatures ($5\times {10}^5\mathrm{K}$) have been produced using a single laser pulse (100 nJ, 800 nm, 200 fs) focused inside a sapphire crystal. The laser pulse creates an intensity over ${10}^{14}\mathrm{W}/{\mathrm{cm}}^2$ converting material within the absorbing volume of $\sim 0.2\mu {\mathrm{m}}^3$ into plasma in a few fs. A pressure of $\sim 10\mathrm{TPa}$, far exceeding the strength of any material, is created generating strong shock and rarefaction waves. This results in the formation of a nanovoid surrounded by a shell of shock-affected material inside undamaged crystal. Analysis of the size of the void and the shock-affected zone versus the deposited energy shows that the experimental results can be understood on the basis of conservation laws and be modeled by plasma hydrodynamics. Matter subjected to record heating and cooling rates of ${10}^{18}\mathrm{K}/\mathrm{s}$ can, thus, be studied in a well-controlled laboratory environment.

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Spectra extending from 600 to 1200 nm have been generated from a Kerr-lens mode-locked Ti:sapphire laser producing 5-fs pulses. Specially designed double-chirped mirror pairs provide broadband controlled dispersion, and a second intracavity focus in a glass plate provides additional spectral broadening. These spectra are to our knowledge the broadest ever generated directly from a laser oscillator.