Metasurface absorbers have shown significant potential in stealth applications due to their adaptability and capacity to reduce the backscattering of electromagnetic (EM) waves. Nevertheless, due to the materials used in the terahertz (THz) range, simultaneously achieving excellent stealth performance in ultrawideband remains an important and difficult challenge to overcome. In this study, an ultrawideband absorber is proposed based on indium tin oxide (ITO) and polyethylene-terephthalate (PET), with a structure thickness of only 0.16λ. ITO sheets are utilized to achieve broad-spectrum, optical transparency and flexibility of the metasurface. The results show that absorption higher than 90% can be achieved in the frequency band ranging from 1.75 to 5 THz under normal TE and TM polarizations, which covers a wide THz band. The structure is insensitive to polarization angles and exhibits 97% relative bandwidth above 90% efficiency up to an oblique incident angle of 60°. To further validate the efficiency of the absorption performance, the radar cross-section (RCS) reduction investigation was performed on both planar and conformal configurations. The findings show that under normal incidence EM waves, both flat and curved surfaces can achieve RCS reduction of over 10 dB, covering an extremely wide frequency range of 1.75 to 5 THz. The metasurface presented in this study exhibits significant potential for use in several THz applications, including flexible electronic devices and stealth aircraft windows.

Multifunctional integrated meta-devices are the demand of modern communication systems and are given a lot of attention nowadays. Most of the research has focused on either cross-polarization conversion (CPC) or linear-to-circular (LP–CP) conversion. However, simultaneously realizing multiple bands with good conversion efficiency remains crucial. This paper proposes a multiband and multifunctional dual reflective polarization converter surface capable of converting a linearly polarized (LP) wave into a circularly polarized (CP) wave, in frequency bands of 12.29–12.63 GHz, 16.08–24.16 GHz, 27.82–32.21 GHz, 33.75–38.74 GHz, and 39.70–39.79 GHz, with 3 dB axial ratio bandwidths of 2.7%, 40.15%, 14.6%, 13.76%, and 0.2%, respectively. Moreover, the converter is capable of achieving CPC with a polarization conversion ratio (PCR) that exceeds 95%, within the frequency ranges of 13.10–14.72 GHz, 25.43–26.00, 32.46–32.56 GHz, and 39.14–39.59 GHz. In addition, to identify the fundamental cause of the CPC and LP–CP conversion, a comprehensive theoretical investigation is provided. Furthermore, the surface current distribution patterns at different frequencies are investigated to analyze the conversion phenomena. A sample prototype consisting of 20 × 20 unit cells was fabricated and measured, verifying our design and the simulated results. The proposed structure has potential applications in satellite communications, radar, stealth technologies, and reflector antennas.

Modern stealth application systems require integrated meta-devices to operate effectively and have gained significant attention recently. This research paper proposes a 1-bit coding metasurface (CM) design. The fundamental component of the proposed CM is integrated to convert linearly polarized incoming electromagnetic waves into their orthogonal counterpart within frequency bands of 12.37–13.03 GHz and 18.96–32.37 GHz, achieving a polarization conversion ratio exceeding 99%. Furthermore, it enables linear-to-circular polarization conversion from 11.80 to 12.29, 13.17 to 18.44, and 33.33 to 40.35 GHz. A second element is produced by rotating a fundamental component by 90°, introducing a phase difference of π (pi) between them. Both elements are arranged in an array using a random aperiodic coding sequence to create a 1-bit CM for reducing the radar cross-section (RCS). The planar structure achieved over 10 dB RCS reduction for polarized waves in the frequency bands of 13.1–13.8 GHz and 20.4–30.9 GHz. A prototype was fabricated and tested, with the experimental results showing a good agreement with the simulated outcomes. The proposed design holds potential applications in radar systems, reflector antennas, stealth technologies, and satellite communication.

We design a photonic terahertz (THz) antenna operating in the 275–296 GHz band, integrating two identical modified uni-traveling-carrier photodiodes (MUTC-PDs), two impedance matching networks, a Wilkinson power combiner and a Vivaldi antenna. Simulation results show a saturated output power of 1.58 dBm at 280 GHz, achieving a 4.13× power enhancement through optimized impedance and power combining compared to a standalone device. The integrated antenna achieves a peak gain of 7.93 dBi, with reflection coefficients below −10 dB. The system demonstrates a power combining efficiency exceeding 95% for phase imbalances up to 20°, and the Wilkinson combiner exhibits only 0.76 dB insertion loss at 285 GHz, demonstrating high radiation and combining efficiency in the 275–296 GHz band.

This study investigates trellis shaping (TS) for mitigating nonlinear impairments in photonic terahertz (THz) communication systems. A parallel shaping architecture integrating hierarchical modulation (HM) with adjustable power allocation is proposed. The scheme applies TS to structure the data stream hierarchically and employs superposition coding (SC) to generate non-uniformly distributed TS-16QAM signals, enhancing transmission performance. Experimental validation over a 5-m link at 320 GHz demonstrates that the proposed scheme achieves a 1.65 dB improvement in input power sensitivity and a 1.39 dB gain in Q-factor compared to the Maxwell–Boltzmann (MB) distribution. Furthermore, the system provides enhanced power allocation flexibility, expanding the tunable range of the hierarchical power ratio by a factor of 1.37.

This paper proposes a dual-side hybrid embedding network (DHEN) to mitigate gain degradation in terahertz amplifiers at frequencies near $f_{\max }$. The proposed approach employs a pre-embedding network for parasitic absorption, followed by Y-embedding for gain enhancement. A theoretical analysis is conducted to derive the embedding conditions for process-constrained circuit synthesis. In this architecture, a capacitive base-side pre-embedding provides intrinsic DC isolation, while a defected-ground-structure (DGS) inductor realizes the Y-embedding inductive element with reduced layout area. Based on the DHEN, a four-stage amplifier is designed in a 130 nm SiGe BiCMOS process. Electromagnetic co-simulation results demonstrate a power gain of 19.3 dB at 280 GHz, corresponding to an 11.5 dB improvement over a conventional unboosted amplifier. The proposed approach provides a unified synthesis methodology that simultaneously addresses parasitic absorption, DC isolation, and gain enhancement for near-$f_{max}$ THz amplifier design.