Gas sensing is essential for detecting and measuring gas concentrations across various environments, with applications in environmental monitoring, industrial safety, and healthcare. The integration of two-dimensional (2D) materials, organic materials, and metal oxides has significantly advanced gas sensor technology, enhancing its sensitivity, selectivity, and response times at room temperature. This review examines the progress in optically activated gas sensors, with emphasis on 2D materials, metal oxides, and organic materials, due to limited studies on their use in optically activated gas sensors, in contrast to other traditional gas-sensing technologies. We detail the unique properties of these materials and their impact on improving the figures of merit (FoMs) of gas sensors. Transition metal dichalcogenides (TMDCs), with their high surface-to-volume ratio and tunable band gap, show exceptional performance in gas detection, especially when activated by UV light. Graphene-based sensors also demonstrate high sensitivity and low detection limits, making them suitable for various applications. Although organic materials and hybrid structures, such as metal–organic frameworks (MoFs) and conducting polymers, face challenges related to stability and sensitivity at room temperature, they hold potential for future advancements. Optically activated gas sensors incorporating metal oxides benefit from photoactive nanomaterials and UV irradiation, further enhancing their performance. This review highlights the potential of the advanced materials in developing the next generation of gas sensors, addressing current research gaps and paving the way for future innovations.

All-inorganic halide perovskites have attracted significant interest in photodetector applications due to their remarkable photoresponse properties. However, the toxicity and instability of lead-based perovskites hinder their commercialization. In this work, we propose cubic Ba₃SbI₃ as a promising, environmentally friendly, lead-free material for next-generation photodetector applications. Ba₃SbI₃ shows good light absorption, low effective masses, and favorable elemental abundance and cost, making it a promising candidate compound for device applications. Its structural, mechanical, electronic, and optical properties were systematically investigated using density functional theory (DFT) with the Perdew–Burke–Ernzerhof (PBE) and hybrid HSE06 functionals. The material was found to be dynamically and mechanically stable, with a direct bandgap of 0.78 eV (PBE) and 1.602 eV (HSE06). Photodetector performance was then simulated in an Al/FTO/In₂S₃/Ba₃SbI₃/Sb₂S₃/Ni configuration using SCAPS-1D. To optimize device efficiency, the width, dopant level, and bulk concentration for each layer of the gadgets were systematically modified, while the effects of interface defects, operating temperature, and series and shunt resistances were also evaluated. The optimized device achieved an open-circuit voltage (Voc) of 1.047 V, short-circuit current density (Jsc) of 31.65 mA/cm², responsivity of 0.605 A W⁻¹, and detectivity of 1.05 × 10¹⁷ Jones. In contrast, in the absence of the Sb₂S₃ layer, the performance was reduced to a Voc of 0.83 V, Jsc of 26.8 mA/cm², responsivity of 0.51 A W⁻¹, and detectivity of 1.5 × 10¹⁵ Jones. These results highlight Ba₃SbI₃ as a promising platform for high-performance, cost-effective, and environmentally benign photodetectors.

Photodetectors (PDs) based on 4H silicon carbide (SiC) have garnered significant interest due to their exceptional optoelectronic properties. However, their photoresponse is typically restricted to the ultraviolet (UV) region, with limited light absorption beyond 380 nm, which constrains their utility in visible light detection applications. To overcome this limitation, an efficient photodetector was developed using an alloy with TaC (80%) and Cu (20%) on a 4H n-type SiC substrate, enabling effective light detection at 405 nm. The device exhibited high performance with a high photoresponsivity of 1.66 ${\mathrm{A}\mathrm{W}}^{-1}$ and a specific detectivity of $2.69\times {10}^8$ Jones at 405 nm. The superior performance of the device is ascribed to the enhanced electrical conductivity and optical absorption of the TaC: Cu layer on the 4H SiC substrate, particularly in the near-ultraviolet region. This photodetector combines ease of fabrication with significant performance improvements, expanding the potential applications of 4H SiC in high-temperature optoelectronics. It also introduces a promising pathway for enhancing 4H SiC-based photodetection capabilities across broader spectral ranges.

Ternary chalcogenide-based sulfide materials with distorted morphologies such as BaZrS₃, CaZrS₃, and SrZrS₃, have recently gained much attention in optoelectronics and photovoltaics due to their high structural and thermal stability and compatibility with low-cost, earth-abundant synthesis routes. However, their relatively large bandgaps often limit their suitability for near-infrared (NIR) photodetectors. Here, we conducted a comprehensive investigation of SrHfSe₃, a ternary chalcogenide with an orthorhombic crystal structure and distinctive needle-like morphology, as a promising candidate for NIR photodetection. SrHfSe₃ exhibits a direct bandgap of 1.02 eV, placing it well within the NIR range. Its robust structure, high temperature stability, phase stability and natural abundance make it a compelling material for next-generation, self-powered NIR photodetectors. An in-depth analysis of the SrHfSe₃-based photodetector was performed using SCAPS-1D simulations, focusing on key performance metrics such as J–V behavior, photoresponsivity, and specific detectivity. Device optimization was achieved by thoroughly altering each layer thickness, doping concentrations, and defect densities. Additionally, the influence of interface defects, absorber bandgap, and operating temperature was assessed to enhance the photoresponse. Under optimal conditions, the device achieved a short-circuit current density (Jsc) of 45.88 mA/cm², an open-circuit voltage (Voc) of 0.7152 V, a peak photoresponsivity of 0.85 AW⁻¹, and a detectivity of 2.26 × 10¹⁴ Jones at 1100 nm. A broad spectral response spanning 700–1200 nm confirms its efficacy in the NIR region. These results position SrHfSe₃ as a strong contender for future NIR photodetectors and provide a foundation for experimental validation in advanced optoelectronic applications.

Robust control over the coupling and propagation of surface plasmon polaritons (SPPs) is essential for advancing various plasmonic applications. Traditional planar structures, commonly used to design SPP directional couplers, face limitations such as low extinction ratios and design complexities. These issues frequently hinder the dense integration and miniaturisation of photonic systems. Recently, exceptional points (EPs)—unique degeneracies within the parameter space of non-Hermitian systems—have garnered significant attention for enabling a range of counterintuitive phenomena in non-conservative photonic systems, including the non-trivial control of light propagation. In this work, we develop a rigorous temporal coupled-mode theory (TCMT) description of a non-Hermitian metagrating composed of alternating silicon–germanium nanostrips and use it to explore the unidirectional excitation of SPPs at EPs in the visible spectrum. Within this framework, EPs, typically associated with the coalescence of eigenvalues and eigenstates, are leveraged to manipulate light propagation in nonconservative photonic systems, facilitating the refined control of SPPs. By spatially modulating the permittivity profile at a dielectric–metal interface, we induce a passive parity–time ($\mathcal{PT}$)-symmetry, which allows for refined tuning of the SPPs’ directional propagation by optimising the structure to operate at EPs. At these EPs, a unidirectional excitation of SPPs with a directional intensity extinction ratio as high as 40 dB between the left and right excited SPP modes can be reached, with potential applications in integrated optical circuits, visible communication technologies, and optical routing, where robust and flexible control of light at the nanoscale is crucial.