Identifying air-stable two-dimensional (2D) ferromagnetism with high Curie temperature (Tc) is highly desirable for its potential applications in next-generation spintronics. However, most of the work reported so far mainly focuses on promoting one specific key factor of 2D ferromagnetism (Tc or air stability), rather than comprehensive promotion of both of them. Herein, ultrathin Cr1−xTe crystals grown by chemical vapor deposition (CVD) show thickness-dependent Tc up to 285 K. The out-of-plane ferromagnetic order is well preserved down to atomically thin limit (2.0 nm), as evidenced by anomalous Hall effect observed in non-encapsulated samples. Besides, the CVD-grown Cr1−xTe nanosheets present excellent ambient stability, with no apparent change in surface roughness or electrical transport properties after exposure to air for months. Our work provides an alternative platform for investigation of intrinsic 2D ferromagnetism and development of innovative spintronic devices.
Two-dimensional (2D) materials with inherent magnetism have attracted considerable attention in the fields of spintronics and condensed matter physics. The anomalous Hall effect (AHE) offers a theoretical foundation for understanding the origins of 2D ferromagnetism (2D-FM) and offers a valuable opportunity for applications in topological electronics. Here, we present uniform and large-size 2D Cr7Te8 nanosheets with varying thicknesses grown using the chemical vapor deposition (CVD) method. The 2D Cr7Te8 nanosheets with robust perpendicular magnetic anisotropy, even a few layers deep, exhibit a Curie temperature (TC) ranging from 180 to 270 K according to the varying thickness of Cr7Te8. Moreover, we observed a temperature-induced reversal in the sign of the anomalous Hall resistance, correlating with changes in the intrinsic Berry curvature. Additionally, the topological Hall effect (THE) observed at low temperatures suggests the presence of non-trivial spin chirality. Our findings about topologically non-trivial magnetic spin states in 2D ferromagnets provide a promising opportunity for new designs in magnetic memory spintronics.