This study presents the development of a highly robust, pressureless, and void-free silver sinter-bonding technology for power semiconductor packaging. A bimodal silver paste containing silver nanoparticles and sub-micron particles was used, with polymethyl methacrylate (PMMA) as an additive to provide additional thermal energy during sintering. This enabled rapid sintering and the formation of a dense, void-free bonding joint. The effects of sintering temperature and PMMA content on shear strength and microstructure were systematically investigated. The results showed that the shear strength increased with rising sintering temperatures, achieving a maximum of 41 MPa at 300 °C, with minimal void formation due to enhanced particle necking facilitated by PMMA combustion. However, at 350 °C, the shear strength decreased to 35 MPa due to cracks and voids at the copper substrate–copper oxide interface caused by thermal expansion mismatch. The optimal PMMA content was found to be 5 wt.%, balancing sufficient thermal energy and void reduction. This pressureless sintering technology demonstrates significant potential for high-reliability applications in power semiconductor modules operating under high-temperature and high-stress conditions.

Electromagnetic interference (EMI) shielding is critical for maintaining signal integrity in high-speed electronic packaging. However, conventional shielding approaches face limitations in process complexity and spatial efficiency. In this study, an EMI shielding film based on trimodal silver (Ag) ink and low-dielectric polyimide (PI) resin was developed and comprehensively evaluated. The fabricated film exhibited an average shielding effectiveness (SE) of −99.7 dB in the 6–18 GHz frequency range and demonstrated a 50% increase in electrical conductivity after lamination (from 0.752 × 10⁵ S/m to 1.13 × 10⁵ S/m). The horizontal thermal conductivity reached 34.614 W/m·K, which was 3.4 times higher than the vertical value (10.249 W/m·K). Signal integrity simulations showed significant reductions in near-end crosstalk (NEXT, 77.8%) and far-end crosstalk (FEXT, 65%). Moreover, cyclic bending tests confirmed excellent mechanical durability, with a normalized resistance change below 0.6 after 1000 cycles at a bending radius of 4 mm. Notably, the film enabled a 50% reduction in signal line spacing while maintaining signal integrity, even without strict compliance with the 3W Rule. These results demonstrate the potential of the proposed EMI shielding film as a high-performance solution for advanced packaging applications requiring high-frequency operation, thermal management, and mechanical flexibility.