The measurement and description of the charge-carrier lifetime (${\tau }_{\mathrm{c}}$) is crucial for the wide-ranging applications of lead-halide perovskites. We present time-resolved microwave-detected photoconductivity decay (TRMCD) measurements and a detailed analysis of the possible recombination mechanisms including trap-assisted, radiative, and Auger recombination. We prove that performing injection-dependent measurement is crucial in identifying the recombination mechanism. We present temperature and injection level dependent measurements in CsPbBr₃, which is the most common inorganic lead-halide perovskite. In this material, we observe the dominance of charge-carrier trapping, which results in ultra-long charge-carrier lifetimes. Although charge trapping can limit the effectiveness of materials in photovoltaic applications, it also offers significant advantages for various alternative uses, including delayed and persistent photodetection, charge-trap memory, afterglow light-emitting diodes, quantum information storage, and photocatalytic activity.

Photovoltaic devices are usually qualified at room temperature and standard illumination. However, actual operation conditions change significantly during

The carrier lifetime characterization of solar cells is typically performed at room temperature, although the operational temperature of a solar panels can reach 60 °C. We realized a setup for laser controlled photoconductance decay (PCD) measurement at elevated temperatures induced by light. We investigated precursor p-PERC cells from multiple parts of the same ingot using this technique. From the injection level dependent carrier lifetime results the implied current-voltage characteristics are evaluated as well. We observed a relatively small but noticeable increase of the carrier lifetime up to 30% with increasing the temperature from 30°C to 60°C in all samples. Saturation current values obtained using the Kane-Swanson method indicate, that not only the bulk lifetime improves but the surface recombination rate weakens. Temperature coefficient values of the implied cell efficiency are around -0.35 rel%/°C and slightly below which agrees with typical results of electrical tests. However, due to the minor increase of the carrier lifetime, this is still a bit above the value one can obtain theoretically considering purely the known decrease of the open circuit voltage caused by the increased intrinsic charge carrier concentration at higher temperatures.

This research investigates organic photovoltaic (OPV) structures using time‐correlated single photon counting (TCSPC) to study time‐resolved fluorescence dynamics under low injection conditions. A picosecond laser diode with a wavelength of 650 nm and a single photon avalanche diode (SPAD) are applied for excitation and detection. The measurements are performed at an irradiance of 0.011 W/cm ² (1.2 × 10 ⁸ photons/pulse) which is sufficiently low to avoid damaging the sample. Decay characteristics are analyzed using iterative reconvolution. The samples include various absorber species and structural configurations, revealing fluorescence decay components as short as 30–500 ps. Such rapid dynamics can only be detected using conventional photodiode‐based setups at much higher excitation levels. The findings indicate that while absorption spectra vary with structural properties like layer thickness, decay times are primarily determined by the absorber material. TCSPC measurements thus provide deeper insights into the recombination dynamics of organic semiconductors.