Here, we demonstrate the enhanced water-splitting performance (I = 10 mA/cm², Tafel slope = 60 mV/dec, onset potential = −80 mV) of atmospheric air plasma treated (AAPT) SnS thin films by the hydrogen evolution reaction (HER). The as prepared SnS films were subjected to Atmospheric Air Plasma Treatment (AAPT) which leads to formation of additional phases of Sn and SnO₂ at plasma powers of 150 W and 250 W, respectively. The AAPT treatment at 150 W leads to the evaporation of the S atoms as SO₂ generates a number of S-vacancies and Sn active edge sites over the surface of the SnS thin film. S-vacancies also create Sn active edge sites, surface p-type pinning that tunes the suitable band positions, and a hydrophilic surface which is beneficial for hydrogen adsorption/desorption. At high plasma power (250 W), the surface of the SnS films becomes oxidized and degrades the HER performance. These results demonstrate that AAPT (150 W) is capable of improving the HER performance of SnS thin films and our results indicate that SnS thin films can work as efficient electrocatalysts for HER.

We report synthesis of SnO₂/multi-layer graphene nanocomposites by an easy low temperature (60 °C) electroless plating route. Aqueous suspension containing Sn(BF₄)₂ with multi-layer graphene is reacted at 60 °C in an acidic environment for 1 hour, and Na₂S₂O₄ is used to reduce tin ion from Sn(BF₄)₂. After electroless plating, the presence of SnO₂ particle (15 to 35 nm) attached with the multi-layer graphene is confirmed by TEM. Tin oxide (SnO₂) can be used to modify multi-layer graphene via electroless plating process decorating with oxygen-containing functional groups. It is found that the electroless plating has enhanced the electrochemical performance of SnO₂ and multi-layer graphene that shows reasonably good capacity (∼243 mAhg⁻¹ after 50 charge/discharge cycles) and high columbic efficiency (∼78 %).

We investigate the lithium storage properties of graphene oxide (GO) and zinc oxide/reduced graphene oxide (ZnO/rGO) hollow sphere structure nanocomposite as anode for LIB. GO is obtained by Hummers method controlled by the various process parameters and the ZnO/rGO hollow sphere nanocomposite is synthesized by a low temperature (95 °C) chemical solution reaction. The capacity of ZnO/rGO composite, is increased remarkably as compared to GO sheets, and this is due to the synergistic effects of both the components in the composite. The reduced graphene oxide (rGO) acts as a conductive buffer layer that promotes the conductivity, and suppresses the volume expansion of ZnO during the charge/discharge process. ZnO/rGO hollow sphere structure nanocomposite has higher capacity 605.36 mAh g^-1 after 20 cycles.