Surface-enhanced Raman scattering (SERS) and tip-enhanced Raman scattering (TERS) have opened a variety of exciting research fields. However, although a vast number of applications have been proposed since the two techniques were first reported, none has been applied to real practical use. This calls for an update in the recent fundamental and application studies of SERS and TERS. Thus, the goals and scope of this review are to report new directions and perspectives of SERS and TERS, mainly from the viewpoint of combining their mechanism and application studies. Regarding the recent progress in SERS and TERS, this review discusses four main topics: (1) nanometer to subnanometer plasmonic hotspots for SERS; (2) Ångström resolved TERS; (3) chemical mechanisms, i.e., charge-transfer mechanism of SERS and semiconductor-enhanced Raman scattering; and (4) the creation of a strong bridge between the mechanism studies and applications.

Surface-enhanced Raman scattering (SERS)-active nanomaterials have extended from noble metals and transition metals to semiconductor materials, since the first discovery of SERS in the mid-1970s. In comparison with metal substrates and transition metals, semiconductor materials have additional optical and electrical properties besides SERS enhancement ability, which enable them to display remarkable charge-transfer enhancement and catalytic ability. Moreover, their superior biocompatibility allows these nanomaterials to have great potential applications in bioscience. Herein we highlight the fast growing research field focusing on SERS-active semiconductor nanomaterials and semiconductor-other material heterostructures developed in our group as well as in other related research studies. The material size, morphology and assembly-dependent SERS enhancement have been discussed in detail. Furthermore, a variety of promising applications of semiconductor-enhanced Raman scattering in photoelectric characterization, redox biochemistry, sensing, and the catalytic degradation of organic pollutants are introduced.