An electrically active impurity was introduced into Si/SiO _x nanoparticles with high temperature annealing in phosphorus vapor.

Colloidal quasi-two-dimensional cadmium chalcogenide nanoplatelets have attracted considerable interest due to their narrow excitonic emission and absorption bands, making them promising candidates for advanced optical applications. In this study, the synthesis of quasi-two-dimensional CdSe NPLs with a thickness of 3.5 monolayers was investigated to understand the effects of synthesis temperature on their stoichiometry, morphology, and optical properties. The NPLs were synthesized using a colloidal method with temperatures ranging from 170 °C to 210 °C and optimized precursor ratios. Total reflection X-ray fluorescence (TXRF) analysis was employed to determine stoichiometry, while high-resolution transmission electron microscopy (HRTEM) and UV-Vis spectroscopy and photoluminescence spectroscopy were used to analyze the structural and optical characteristics. The results showed a strong correlation between increasing synthesis temperature and the enlargement of nanoscroll diameters, indicating dynamic growth. The best results in terms of uniformity, stoichiometry, and optical properties were achieved at a growth temperature of 200 °C. At this temperature, no additional optical bands associated with secondary populations or hetero-confinement were observed, indicating the high purity of the sample. Samples synthesized at lower temperatures exhibited deviations in stoichiometry and optical performance, suggesting the presence of residual organic compounds.

Colloidal cadmium telluride (CdTe) nanoplatelets (NPLs) are promising materials for optoelectronic applications, such as photovoltaics and light-emitting diodes, due to their unique optical and electronic properties. However, controlling their growth, thickness, and stoichiometry remains challenging. This study explores the effect of synthesis temperature on the structural, optical, and stoichiometric properties of CdTe NPLs. CdTe NPLs were synthesized at temperatures of 170 °C, 180 °C, 190 °C, and 200 °C using colloidal methods. The resulting NPLs were characterized by UV–Vis absorption spectroscopy, photoluminescence (PL) spectroscopy, transmission electron microscopy (TEM), and total reflection X-ray fluorescence (TXRF) to assess their morphology, structure, and elemental composition. The results showed that the synthesis temperature significantly affected the NPL’s morphology and stoichiometry. Optimal stoichiometry was achieved at 180 °C and 190 °C, with the crystal structure transitioning from zinc blende at lower temperatures to wurtzite at higher temperatures. Optical properties, including luminescence intensity and emission peaks, also varied with temperature. The synthesis temperature is an important parameter in controlling the structural and optical properties of CdTe NPLs. The optimal conditions for obtaining NPLs with the best characteristics were identified at 190 °C, presenting important findings for further optimization of CdTe NPL synthesis for optoelectronic applications.

Nanocrystals of Si doped with S, Se and Te were synthesized by annealing them in chalcogen vapors in a vacuum at a high temperature range from 800 to 850 °C. The influence of the dopant on the structure and morphology of the particles and their optical and electrical properties was studied. In the case of all three chalcogens, the recrystallization of Si was observed, and XRD peaks characteristic of noncubic Si phases were found by means of electronic diffraction for Si doped with S and Se. Moreover, in presence of S and Te, crystalline rods with six-sided and four-sided cross-sections, respectively, were formed, their length reaching hundreds of μm. Samples with sulfur and selenium showed high conductivity compared to the undoped material.

The electrical characteristics of thin films formed from Si nanoparticles (nc-Si) with various degrees of doping are studied. To exclude the influence of ionic conductivity, the current parameters of the films were recorded in an ultrahigh vacuum (P ~ 3 – 5∙10–9 Torr) with preliminary high-temperature (9500C) annealing. An analysis of the temperature dependences of the conductivity showed that in nc-Si films formed from heavily doped nanoparticles (the concentration of free electrons ne is greater than 1019 cm-3), the transport is determined by variable-length hopping (VRH). In these samples, the Mott conductivity prevails at temperatures above 300C and at lower temperatures, the Efros-Shklovskii type variable range hopping conduction is dominate. In films with a medium level of doping of nanoparticles (ne <1019 cm-3), transport is realized by the Mott, Efros - Shklovskii and thermally activated conductivities. At the same time, thermally activated conductivity is dominated at temperatures above 560K. In nc-Si films formed from undoped nanoparticles, the transport parameters are determined by thermally activated conductivity and Mott's conductivity. Conductivity of Efros - Shklovskii is not observed in such films. From the analysis of the parameters corresponding to the Mott and Efros - Shklovsky conductivities, the localization lengths of wave functions, the density of states at the Fermi level (g (EF)), and average hopping lengths are found. The average hopping lengths in nc-Si films from nanoparticles pre-etched in HF are in the range 56 - 86 nm, which indicates that hopping in such films occurs via intermediate nanoparticles.