Platinum stability: Dissolution of Pt, which is one major degradation mechanism in, for example, hydrogen/air fuel cells, was monitored under potentiodynamic and potentiostatic conditions. The highly sensitive and time‐resolving dissolution monitoring enables the distinction between anodic and cathodic dissolution processes during potential transient and chronoamperometric experiments, and the precise quantification of the amount of dissolved Pt.

The near-surface ion distribution at the solid–liquid interface during the Hydrogen Oxidation Reaction (HOR)/Hydrogen Evolution Reaction (HER) on a rotating platinum disc electrode is demonstrated in this work. The relation between reaction rate, mass transport and the resulting surface pH-value is used to theoretically predict cyclic voltammetry behaviour using only thermodynamic and diffusion data obtained from the literature, which were confirmed by experimental measurements. The effect of buffer addition on the current signal, the surface pH and the ion distribution is quantitatively described by analytical solutions and the fragility of the surface pH during reactions that form or consume H⁺ in near-neutral unbuffered solutions or poorly buffered media is highlighted. While the ideal conditions utilized in this fundamental study cannot be directly applied to real scenarios, they do provide a basic understanding of the surface pH concept for more complex heterogeneous reactions.

The fabrication and characterization of high-mobility, $n$ -channel organic field-effect transistors (OFET) based on methanofullerene [6,6]-phenyl ${\mathrm{C}}_{61}$ -butyric acid methyl ester using various organic insulators as gate dielectrics is presented. Gate dielectrics not only influence the morphology of the active semiconductor, but also the distribution of the localized states at the semiconductor-dielectric interface. Spin-coated organic dielectrics with very smooth surfaces provide a well-defined interface for the formation of high quality organic semiconductor films. The charge transport and mobility in these OFET devices strongly depend on the choice of the gate dielectric. The electron mobilities obtained are in the range of $0.05\text{–}0.2{\mathrm{cm}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$ . Most of the OFETs fabricated using organic dielectrics exhibit an inherent hysteresis due to charge trapping at the semiconductor-dielectric interface. Devices with a polymeric electret as gate dielectric show a very large and metastable hysteresis in its transfer characteristics. The observed hysteresis is found to be temperature dependent and has been used to develop a bistable memory element.

Zinc is a well-known sacrificial coating material for iron and co-deposition of suitable particles is of interest for further improving its corrosion protection performance. However, incorporation of particles that are well dispersible in aqueous electrolytes, such as silica particles, is extremely difficult. Here, we report a detailed study of Zn-SiO2 nanocomposite coatings deposited from a zinc sulfate solution at pH 3. The effect of functionalization of the silica particles on the electro-codeposition was investigated. The best incorporation was achieved for particles modified with SiO2-SH, dithiooxamide or cysteamine; these particles have functional groups that can strongly interact with zinc and therefore incorporate well into the metal matrix. Other modifications (SiO2-NH3+, SiO2-Cl and N,N-dimethyldodecylamine) of the silica particles lead to adsorption and entrapment only.