Electrochemical conversion of CO₂ to alcohols is one of the most challenging methods of conversion and storage of electrical energy in the form of high-energy fuels. The challenge lies in the catalyst design to enable its real-life implementation. Herein, we demonstrate the synthesis and characterization of a cobalt(III) triphenylphosphine corrole complex, which contains three polyethylene glycol residues attached at the meso-phenyl groups. Electron-donation and therefore reduction of the cobalt from cobalt(III) to cobalt(I) is accompanied by removal of the axial ligand, thus resulting in a square-planar cobalt(I) complex. The cobalt(I) as an electron-rich supernucleophilic d⁸-configurated metal centre, where two electrons occupy and fill up the antibonding d_z² orbital. This orbital possesses high affinity towards electrophiles, allowing for such electronically configurated metals reactions with carbon dioxide. Herein, we report the potential dependent heterogeneous electroreduction of CO₂ to ethanol or methanol of an immobilized cobalt A₃-corrole catalyst system. In moderately acidic aqueous medium (pH = 6.0), the cobalt corrole modified carbon paper electrode exhibits a Faradaic Efficiency (FE%) of 48 % towards ethanol production.

The fabrication and characterization of high-mobility, $n$ -channel organic field-effect transistors (OFET) based on methanofullerene [6,6]-phenyl ${\mathrm{C}}_{61}$ -butyric acid methyl ester using various organic insulators as gate dielectrics is presented. Gate dielectrics not only influence the morphology of the active semiconductor, but also the distribution of the localized states at the semiconductor-dielectric interface. Spin-coated organic dielectrics with very smooth surfaces provide a well-defined interface for the formation of high quality organic semiconductor films. The charge transport and mobility in these OFET devices strongly depend on the choice of the gate dielectric. The electron mobilities obtained are in the range of $0.05\text{–}0.2{\mathrm{cm}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$ . Most of the OFETs fabricated using organic dielectrics exhibit an inherent hysteresis due to charge trapping at the semiconductor-dielectric interface. Devices with a polymeric electret as gate dielectric show a very large and metastable hysteresis in its transfer characteristics. The observed hysteresis is found to be temperature dependent and has been used to develop a bistable memory element.