Huaiyu Ye

Dr. Huaiyu Ye


Research Focus & Metrics

Academic Career Length

16Years (2011-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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15 January 2018 in IEEE Access
Verified
Journal Article
Open access
Cheng QianCheng Qian
Cheng Qian
AGAmir Mirza Gheitaghy
Amir Mirza Gheitaghy
JFJiajie Fan
Jiajie Fan
HTHongyu Tang
Hongyu Tang
BSBo Sun
Bo Sun
GZGuoqi Zhang
Guoqi Zhang
As an increasing attention towards sustainable development of energy and environment, the power electronics (PEs) are gaining more and more attraction on various energy systems. The insulated gate bipolar transistor (IGBT), as one of the PEs with numerous advantages and potentials for development of higher voltage and current ratings, has been used in a board range of applications. However, the continuing miniaturization and rapid increasing power ratings of IGBTs have remarkable high heat flux, which requires complex thermal management. In this work, studies of the thermal management on IGBTs are generally reviewed including analyzing, comparing and classifying the results originating from these researches. The thermal models to accurately calculate the dynamic heat dissipation are divided into analytical models, numerical models and thermal network models respectively. The thermal resistances of current IGBT modules are also studied. According to the current products on a number of IGBTs, we observe that the junction-to-case thermal resistance generally decreases inversely in terms of the total thermal power. In addition, the cooling solutions of IGBTs are reviewed and the performance of the various solutions are studied and compared. At last, we have proposed a quick and efficient evaluation judgment for the thermal management of the IGBTs depended on the requirements on the junction-to-case thermal resistance and equivalent heat transfer coefficient of the test samples.

1 March 2016 in Applied Thermal Engineering
Verified
Journal Article
Closed access
XCXianping Chen
Xianping Chen
HYHuaiyu Ye
Huaiyu Ye
XFXuejun Fan
Xuejun Fan
TRTianling Ren
Tianling Ren
GZGuoqi Zhang
Guoqi Zhang

30 October 2020 in Journal of Materials Chemistry A
Verified
Journal Article
Open access
PDF file
HTHongyu Tang
Hongyu Tang
LSLeandro Nicolas Sacco
Leandro Nicolas Sacco
SVSten Vollebregt
Sten Vollebregt
HYHuaiyu Ye
Huaiyu Ye
XFXuejun Fan
Xuejun Fan
GZGuoqi Zhang
Guoqi Zhang
2D and nanostructured metal sulfide materials are promising in the advancement of several gas sensing applications due to the abundant choice of materials with easily tunable electronic, optical, physical, and chemical properties. These applications are particularly attractive for gas sensing in environmental monitoring and breath analysis. This review gives a systematic description of various gas sensors based on 2D and nanostructured metal sulfide materials. Firstly, the crystal structures of metal sulfides are introduced. Secondly, the gas sensing mechanisms of different metal sulfides based on density functional theory analysis are summarised. Various gas-sensing concepts of metal sulfide-based devices, including chemiresistors, functionalized metal sulfides, Schottky junctions, heterojunctions, field-effect transistors, and optical and surface acoustic wave sensors, are compared and presented. It then discusses the extensive applications of metal sulfide-based sensors for different gas molecules, including volatile organic compounds (i.e., acetone, benzene, methane, formaldehyde, ethanol, and liquefied petroleum gas) and inorganic gas (i.e., CO2, O2, NH3, H2S, SO2, NOx, CH4, H2, and humidity). Finally, a strengths–weaknesses–opportunities–threats (SWOT) analysis is proposed for future development and commercialization in this field.

1 May 2017 in Applied Surface Science
Verified
Journal Article
Closed access
XSXiang Sun
Xiang Sun
QYQun Yang
Qun Yang
RMRuishen Meng
Ruishen Meng
CTChunjian Tan
Chunjian Tan
QLQiuhua Liang
Qiuhua Liang
XCXianping Chen
Xianping Chen

28 December 2017 in IEEE Electron Device Letters
Verified
Journal Article
Closed access
HCHeping Cui
Heping Cui
KZKai Zheng
Kai Zheng
YZYingying Zhang
Yingying Zhang
HYHuaiyu Ye
Huaiyu Ye
XCXianping Chen
Xianping Chen
The adsorption of gas molecules, such as N2, O2, CO2, H2O, CO, NO, NO2, H2S, NH3, and SO2 on monolayer C3N has been investigated by means of first-principles and non-equilibrium Green's function calculations. We show that monolayer C3N is preferable for the NO2 and SO2 molecules with suitable adsorption strength and apparent charge transfers. Moreover, the I-V characteristics of C3N show clear variations after the adsorption of NO2 and SO2. Such sensitivity and selectivity to NO2 and SO2 molecules make C3N a promising candidate for highly sensitive gas sensor.

21 March 2017 in IEEE Electron Device Letters
Verified
Journal Article
Closed access
XCXianping Chen
Xianping Chen
LWLi-Ming Wang
Li-Ming Wang
XSXiang Sun
Xiang Sun
RMRui-Sheng Meng
Rui-Sheng Meng
JXJing Xiao
Jing Xiao
GZGuo-Qi Zhang
Guo-Qi Zhang
Properties of sulfur dioxide (SO 2 ) and nitrogen dioxide (NO 2 ) adsorbed on different types of arsenenes (pristine, boron-, and nitrogen-doped arsenene) are studied with the first-principle approach, which is based on the density functional theory. Adsorption energy, adsorption distance, Hirshfeld charge, and I-V characteristic are calculated. The results demonstrate that NO 2 and SO 2 exhibit a chemisorption character on boron-doped arsenene (B-arsenene) while a physisorption character on pristine and nitrogen-doped arsenene (P- and N-arsenene) with moderate adsorption energy. Moreover, analysis of density of state shows a positive change of electronic property when the two gas molecules are adsorbed on pristine/doped arsenenes. According to the I-V characteristic curves, N-arsenene can be treated as an excellent sensing material for SO 2 gas sensor. Meanwhile, P-arsenene has a potential application in the NO 2 gas sensor.