Hongyu Tang

Dr. Hongyu Tang

orcid

Research Focus & Metrics

Academic Career Length

14Years (2013-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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15 January 2018 in IEEE Access
Verified
Journal Article
Open access
Cheng QianCheng Qian
Cheng Qian
AGAmir Mirza Gheitaghy
Amir Mirza Gheitaghy
JFJiajie Fan
Jiajie Fan
HTHongyu Tang
Hongyu Tang
BSBo Sun
Bo Sun
GZGuoqi Zhang
Guoqi Zhang
As an increasing attention towards sustainable development of energy and environment, the power electronics (PEs) are gaining more and more attraction on various energy systems. The insulated gate bipolar transistor (IGBT), as one of the PEs with numerous advantages and potentials for development of higher voltage and current ratings, has been used in a board range of applications. However, the continuing miniaturization and rapid increasing power ratings of IGBTs have remarkable high heat flux, which requires complex thermal management. In this work, studies of the thermal management on IGBTs are generally reviewed including analyzing, comparing and classifying the results originating from these researches. The thermal models to accurately calculate the dynamic heat dissipation are divided into analytical models, numerical models and thermal network models respectively. The thermal resistances of current IGBT modules are also studied. According to the current products on a number of IGBTs, we observe that the junction-to-case thermal resistance generally decreases inversely in terms of the total thermal power. In addition, the cooling solutions of IGBTs are reviewed and the performance of the various solutions are studied and compared. At last, we have proposed a quick and efficient evaluation judgment for the thermal management of the IGBTs depended on the requirements on the junction-to-case thermal resistance and equivalent heat transfer coefficient of the test samples.

30 October 2020 in Journal of Materials Chemistry A
Verified
Journal Article
Open access
PDF file
HTHongyu Tang
Hongyu Tang
LSLeandro Nicolas Sacco
Leandro Nicolas Sacco
SVSten Vollebregt
Sten Vollebregt
HYHuaiyu Ye
Huaiyu Ye
XFXuejun Fan
Xuejun Fan
GZGuoqi Zhang
Guoqi Zhang
2D and nanostructured metal sulfide materials are promising in the advancement of several gas sensing applications due to the abundant choice of materials with easily tunable electronic, optical, physical, and chemical properties. These applications are particularly attractive for gas sensing in environmental monitoring and breath analysis. This review gives a systematic description of various gas sensors based on 2D and nanostructured metal sulfide materials. Firstly, the crystal structures of metal sulfides are introduced. Secondly, the gas sensing mechanisms of different metal sulfides based on density functional theory analysis are summarised. Various gas-sensing concepts of metal sulfide-based devices, including chemiresistors, functionalized metal sulfides, Schottky junctions, heterojunctions, field-effect transistors, and optical and surface acoustic wave sensors, are compared and presented. It then discusses the extensive applications of metal sulfide-based sensors for different gas molecules, including volatile organic compounds (i.e., acetone, benzene, methane, formaldehyde, ethanol, and liquefied petroleum gas) and inorganic gas (i.e., CO2, O2, NH3, H2S, SO2, NOx, CH4, H2, and humidity). Finally, a strengths–weaknesses–opportunities–threats (SWOT) analysis is proposed for future development and commercialization in this field.

2 October 2019 in ACS Applied Materials & Interfaces
Verified
Journal Article
Closed access
HTHongyu Tang
Hongyu Tang
YLYu-Tao Li
Yu-Tao Li
RSRobert Sokolovskij
Robert Sokolovskij
LSLeandro Nicolás Sacco
Leandro Nicolás Sacco
HZHongze Zheng
Hongze Zheng
GZGuoqi Zhang
Guoqi Zhang

26 May 2017 in IEEE Electron Device Letters
Verified
Journal Article
Closed access
FHFa-Fei Hu
Fa-Fei Hu
HTHongyu Tang
Hongyu Tang
CTChun-Jian Tan
Chun-Jian Tan
HYHuaiyu Ye
Huaiyu Ye
XCXian-Ping Chen
Xian-Ping Chen
GZGuo-Qi Zhang
Guo-Qi Zhang
The sensing behavior of monolayer tin sulfide (SnS) for four gas molecules (NH 3 , NO 2 , CO, and H 2 O) are studied by the first-principle calculation based on density-functional theory. We calculate adsorption energy, adsorption distance, and Hirshfeld charge to estimate the adsorption ability of monolayer SnS for these gas molecules. The results demonstrate that all the gas molecules show physisorption nature. We further calculate the current-voltage (I-V) curves using the nonequilibrium Green's function formalism for evaluating the NO 2 gas sensing properties. The monolayer SnS is found to be strongly sensitive to NO 2 molecule dependent on moderate adsorption energy, excellent charge transfer, and significant change of I-V property before and after gas adsorption. Therefore, we suggest that monolayer SnS can be a prominent candidate for application as NO 2 gas sensor.

14 January 2022 in Nanophotonics
Verified
Journal Article
Open access
PDF file
HTHongyu Tang
Hongyu Tang
SMSergey G. Menabde
Sergey G. Menabde
TATarique Anwar
Tarique Anwar
JKJunhyung Kim
Junhyung Kim
MJMin Seok Jang
Min Seok Jang
GTGiulia Tagliabue
Giulia Tagliabue
Photo‐modulation is a promising strategy for contactless and ultrafast control of optical and electrical properties of photoactive materials. Graphene is an attractive candidate material for photo‐modulation due to its extraordinary physical properties and its relevance to a wide range of devices, from photodetectors to energy converters. In this review, we survey different strategies for photo‐modulation of electrical and optical properties of graphene, including photogating, generation of hot carriers, and thermo‐optical effects. We briefly discuss the role of nanophotonic strategies to maximize these effects and highlight promising fields for application of these techniques.

20 January 2021 in The Journal of Physical Chemistry C
Verified
Journal Article
Closed access
HTHongyu Tang
Hongyu Tang
DHDong Hu
Dong Hu
ZCZhen Cui
Zhen Cui
HYHuaiyu Ye
Huaiyu Ye
GZGuoqi Zhang
Guoqi Zhang