In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding I_on-current of 15 μA/μm at the supply voltage of V_dd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS) at room temperature shows an average of 76 mV/dec over 4 orders of drain current I_d from 5 × 10⁻⁶ to 5 × 10⁻² µA/µm. Optimized devices also show excellent current saturation, an important feature for analog performance.

In this paper we report on our progress with SiGe gate-normal / line tunneling FETs, highlighting recent advancements by the example of three transistor concepts. We demonstrate the unique (...)