AlGaN/GaN high electron mobility transistors (HEMTs) have demonstrated their extraordinary potential in developing solid-state microsensors for detecting gases, metal ions, anions, biomolecules, and other substances due to their excellent chemical stability, high surface charge sensitivity, high temperature-tolerance performance, and low power consumption characteristics. In this paper, only three types of AlGaN/GaN HEMT-based sensors used for detecting the p H value, heavy metal ions, and harmful anions, which are suitable for water quality monitoring, will be discussed. First, we introduce the structural design, detection principle, and fabrication processes of AlGaN/GaN HEMT-based sensors. Then, surface functionalization methods for the gate region, sensing mechanisms, and the sensitivity and selectivity performances based on different gate region treatments are reviewed and analyzed. Finally, some challenging problems that hinder the practical application of the sensors are proposed.

The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an open gate. It was shown that the Al_0.83In_0.17N/GaN device demonstrates excellent pH sense functionality in aqueous solutions, exhibiting higher sensitivity (−30.83 μA/pH for AlInN/GaN and −4.6 μA/pH for AlGaN/GaN) and a faster response time, lower degradation and good stability with respect to the AlGaN/GaN device, which is attributed to higher two-dimensional electron gas (2DEG) density and a thinner barrier layer in Al_0.83In_0.17N/GaN owning to lattice matching. On the other hand, the open gate geometry was found to affect the pH sensitivity obviously. Properly increasing the width and shortening the length of the open gate area could enhance the sensitivity. However, when the open gate width is too larger or too small, the pH sensitivity would be suppressed conversely. Designing an optimal ratio of the width to the length is important for achieving high sensitivity. This work suggests that the AlInN/GaN-based 2DEG carrier modulated devices would be good candidates for high-performance pH sensors and other related applications.

To improve the stability and sensitivity of pH sensors based on AlGaN/GaN high electron mobility transistors (HEMTs), we proposed a modified sensing structure by integrating a reference HEMT device. This structural pH sensor exhibits a typical Nernstian behavior with a sensitivity of 54.38 mV/pH, which is higher than the value of 49.43mV/pH derived from the AlGaN/GaN HEMT-based sensor without integrating the reference HEMTs device. Furthermore, the stability of the new structural sensor is enhanced by approximately 19.2% in comparison with that of its traditional counterpart. The improved performances are analyzed using an electrical double-layer model together with an equivalent circuit model, and we find that the new sensor structure has a larger capacitor and exhibits a better rectification effect, hence decreasing the electrical noise and enhancing the stability of the testing signal. Meanwhile, the new sensor structure displays a smaller equivalent resistance and results in a larger available output current, hence exhibiting a higher sensitivity.