HfO₂ thin films were prepared using radio frequency (RF) ion source-assisted deposition, and the effects of auxiliary ion energy on the microstructure, optical properties, and residual stress of the films were systematically studied. The experimental results showed that when the auxiliary ion energy increased, the extinction coefficient, compressive stress, and optical band gap were gradually increased. These changes were attributed to increased grain boundary defects, crystal structure disorder, and grain size decrease due to high-energy ion bombardment. The HfO₂ films deposited at a lower ion energy (600 V) exhibited higher surface quality (RMS = 0.78 nm), better optical properties (k = 10⁻⁵), and lower residual stress (1.26 GPa).

Conventional infrared polarization imaging and detection systems are normally complex, bulky, and expensive, since rare existing absorber components possess polarization selectivity, especially in the long-wavelength infrared (LWIR) range. In this study, we propose a novel high-performance metamaterial absorber with ultra-broadband high absorption and polarization selectivity in the entire LWIR atmospheric window. The absorber can realize an absorptance higher than 90% with a 4750 nm bandwidth due to different surface plasmons coupled with optical phonons. It exhibits precise polarization-selective absorption at the target wavelength; specifically, it can selectively trap TM-polarized light while restricting the absorption of TE-polarized light. In addition, the designed metamaterial exhibits remarkable spectral stability when the geometric parameters of the microstructure change, which is of great benefit in its manufacturing process. The proposed ultra-thin absorber provides a promising approach to simplify LWIR imaging and detection systems and further improve their performance.

In addressing the key technical challenges of achieving ultra-broadband and high film-thickness uniformity for meter-class large-aperture space telescopes, this study utilized a self-developed 4 m-class large-aperture thin-film deposition system. By employing plasma-assisted electron-beam evaporation technology and a co-evaporation method with inner and outer dual-ring multi-evaporation sources, precise control of film-thickness uniformity within a 2 m range was achieved. A composite film structure combining a metal reflective layer and an ultraviolet-enhanced dielectric layer was adopted to realize high reflectivity across an ultra-broad spectrum from ultraviolet to long-wave infrared. Experimental results show that the average reflectance of the composite film reaches 91.52% in the 0.25~0.38 μm spectral band and 99.40% in the 0.38~12 μm spectral band. The thickness uniformity of ZrO₂ and MgF₂ films within the 2 m aperture area was controlled at 1.37% and 3.12%, respectively, meeting the requirements for high uniformity in large-aperture space applications. Radiation testing confirmed that the change in film reflectance is less than 1% under a total irradiation dose of 3.66 × 10⁸ rad(Si), satisfying the demands for operation in harsh space environments. This research provides an innovative solution for thin-film technology in large-aperture, ultra-broad-spectrum space optical systems and holds significant value for engineering applications.