With the advancement of semiconductor technology, chip cooling has become a major obstacle to enhancing the capabilities of power electronic systems. Traditional electronic packaging materials are no longer able to meet the heat dissipation requirements of high-performance chips. High thermal conductivity (TC), low coefficient of thermal expansion (CTE), good mechanical properties, and a rich foundation in microfabrication techniques are the fundamental requirements for the next generation of electronic packaging materials. Currently, metal matrix composites (MMCs) composed of high TC matrix metals and reinforcing phase materials have become the mainstream direction for the development and application of high-performance packaging materials. Silicon carbide (SiC) is the optimal choice for the reinforcing phase due to its high TC, low CTE, and high hardness. This paper reviews the research status of SiC-reinforced aluminum (Al) and copper (Cu) electronic packaging materials, along with the factors influencing their thermo-mechanical properties and improvement measures. Finally, the current research status and limitations of conventional manufacturing methods for SiC-reinforced MMCs are summarized, and an outlook on the future development trends of electronic packaging materials is provided.

In the field of non-silicon MEMSs (micro-electro-mechanical systems), nickel, with its mature preparation method, good compatibility with non-silicon MEMS processes, and excellent mechanical properties, is one of the commonly used structural materials. By effectively combining it with non-silicon MEMS processes, nickel is widely used in typical process systems such as LIGA (Lithography, Galvanoformung, Abformung)/UV-LIGA (Ultraviolet Lithography, Galvanoformung, Abformung). However, with the rapid development of the non-silicon MEMS field, pure nickel materials are no longer able to meet current material demands. Alternatively, nickel–cobalt composite materials have excellent mechanical properties, thermal stability, corrosion resistance, and good adaptability to processing technology because cobalt has unique advantages as a reinforcing phase, including excellent wear resistance, corrosion resistance, and high hardness. This article examines the current methods for preparing nickel–cobalt alloys by focusing on composite electrodeposition of coatings and analyzing their advantages and disadvantages. Based on this, the effect of the composite electrodeposition conditions on the formation mechanism of nickel–cobalt alloy coatings is discussed. Then, the research status of composite electrodeposition methods mainly based on nickel–cobalt nanocomposites is discussed. Finally, a new direction for future work on nickel–cobalt composite materials mainly composed of nickel–cobalt nanomaterials prepared by composite electrodeposition is proposed, and its application prospects in non-silicon MEMS fields are discussed.

In recent decades, with the advancement of micro-electro-mechanical systems technology, traditional materials have become insufficient to meet the demands of cutting-edge technology for various material properties. Composites have attracted widespread attention as an effective and viable solution. Silicon carbide whiskers (SiCw) have emerged as excellent reinforcements due to their high thermal conductivity, low thermal expansion coefficient, high melting point, superior mechanical properties, and high chemical stability. This article provides a comprehensive review of the reinforcement mechanisms and current research state of SiCw-reinforced composites. The reinforcement mechanisms include mainly grain refinement, load transfer, and crack bridging. The composites are categorized based on the type of the matrix: ceramic-based, metal-based, and polymer-based composites. The influence and parameter performance of the reinforcement mechanism on SiCw-reinforced composite materials with different matrices vary. However, the key to improving SiCw-reinforced composites lies in understanding the interplay of properties between the matrix and the reinforcement, as well as the ordered and regular distribution and binding at the interface. Finally, the current state and limitations of SiCw-reinforced composites are summarized, and future development trends are discussed. This article represents a great contribution to the future applications of SiCw-reinforced composite materials.

With the rapid development of electronic technology and large-scale integrated circuit devices, it is very important to develop thermal management materials with high thermal conductivity. Silicon carbide whisker-reinforced copper matrix (Cu/SiCw) composites are considered to be one of the best candidates for future electronic device radiators. However, at present, most of these materials are produced by high-temperature and high-pressure processes, which are expensive and prone to interfacial reactions. To explore the plating solution system suitable for SiCw and Cu composite electroplating, we tried two different Cu-based plating solutions, namely a Systek UVF 100 plating solution of the copper sulfate (CuSO₄) system and a Through Silicon Via (TSV) plating solution of the copper methanesulfonate (Cu(CH₃SO₃)₂) system. In this paper, Cu/SiCw composites were prepared by composite electrodeposition. The morphology of the coating under two different plating liquid systems was compared, and the mechanism of formation of the different morphologies was analyzed. The results show that when the concentration of SiCw in the bath is 1.2 g/L, the surface of the Cu/SiCw composite coating prepared by the CuSO₄ bath has more whiskers with irregular distribution and the coating is very smooth, but there are pores at the junction of the whiskers and Cu. There are a large number of irregularly distributed whiskers on the surface of the Cu/SiCw composite coating prepared with the copper methanesulfonate (Cu(CH₃SO₃)₂) system. The surface of the composite is flat, and Cu grows along the whisker structure. The whisker and Cu form a good combination, and there is no pore in the cross-section of the coating. The observation at the cross-section also reveals some characteristics of the toughening mechanism of SiCw, including crack deflection, bridging and whisker pull-out. The existence of these mechanisms indicates that SiCw plays a toughening role in the composites. A suitable plating solution system was selected for the preparation of high-performance Cu/SiCw thermal management materials with the composite electrodeposition process.