Silicon carbide (SiC) is an interesting semiconductor for MEMS devices. The high-value Young’s modulus of silicon carbide facilitates high frequencies and quality (Q) factors in resonant devices built with double-clamped beams. The aim of this work is to achieve the determination and modeling of the Q-Factor for samples of micromachined 3C-SiC film on silicon substrates. This study demonstrates that the experimental datasets created by Romero, integrated with the thicker samples reported in this work, fit the theoretical model presented in the paper. Furthermore, the influence of the crystallographic defects present at the 3C-SiC/Si interface on the Q-factor can be observed both in the analytical model of Romero and in the numerical model present in COMSOL. 3C-SiC layers with thickness greater than 600 nm are needed to achieve an ideal performance from double-clamped beams.

Silicon carbide (SiC) has emerged as a highly attractive material for microelectromechanical systems (MEMS) operating in harsh environments, owing to its outstanding mechanical, thermal, and chemical properties. This review provides a comprehensive overview of the advantages and limitations of SiC-based MEMS, with particular emphasis on the strong interdependence between material structure, mechanical properties, and epitaxial growth processes. The role of defects, residual stress, and crystal quality is discussed in relation to device performance and reliability. Special attention is devoted to cubic SiC grown on silicon substrates, highlighting how growth-induced features influence the mechanical response of micromachined structures. Furthermore, a detailed analysis of the quality factor (Q-factor) is presented for 3C-SiC (111)/Si resonators, including the development of analytical models and their validation through numerical simulations performed using COMSOL Multiphysics (Version 6.1). The necessity of incorporating anisotropic loss factors in numerical modeling is demonstrated to be essential for accurately describing the experimentally observed behavior. This review aims to provide design guidelines and modeling strategies for the optimization of SiC MEMS, supporting their further development for high-performance and extreme-environment applications, including pressure sensors, mechanical resonators and high-stress-tolerant sensors.

In the simulation of 3C-SiC strain gauges in dynamic environment—particularly those involving vibrations and wave propagation—the accurate representation of energy dissipation is essential for reliable predictive modeling. This paper discusses the implementation of both isotropic and anisotropic damping models within COMSOL Multiphysics. In particular, it focuses on the use of an anisotropic loss factor, represented either as a scalar (η_S) for isotropic cases or as a symmetric 6 × 6 loss factor matrix (${\mathsf{\eta }}_{\mathrm{D}}$) for anisotropic dissipation. This formulation enables the directional dependence of damping behavior to be captured, which is particularly important in composite materials, layered media, and metamaterials where energy dissipation mechanisms vary with orientation. The paper also explores the numerical implications of using anisotropic damping, such as its influence on eigenfrequency solutions, frequency response functions, and transient dynamic simulations. Furthermore, it highlights how the inclusion of directional damping can improve the correlation between simulated and experimental results in scenarios where standard isotropic models fail to capture key physical behaviors.

Silicon carbide (SiC) is a key material for next-generation miniaturized devices and MEMS operating in harsh environments. This paper presents a comprehensive investigation of anisotropic damping mechanisms in heteroepitaxial 3C-SiC double-clamped beam resonators for MEMS applications. Unlike conventional isotropic loss-factor models, which assign a single scalar damping coefficient to all deformation directions, the proposed framework employs a full 6 × 6 loss-factor tensor expressed in Voigt notation, implemented within the COMSOL Multiphysics finite element environment. The tensor formulation enables the direction-dependent description of energy dissipation, capturing the coupling between shear and normal strain modes that arises from the (111) crystallographic orientation and from the heteroepitaxial defect structure of 3C-SiC grown on silicon substrates. The effects of film thickness, effective Young’s modulus, and residual stress on elastic modulus, resonance frequency, and Q-factor are systematically analyzed across five wafers (w1–w5, thickness range 293–890 nm). Experimentally calibrated anisotropic loss-factor matrices are extracted via least-squares fitting to measured Q-factors, and their Frobenius norms are found to correlate negatively with resonance frequency. The anisotropic model reduces Q-factor prediction errors to below 1% for all wafers, significantly outperforming the isotropic approach, particularly for films thicker than 600 nm. These results demonstrate that an accurate treatment of directional dissipation is essential for the design of high-Q resonators and high-sensitivity strain sensors targeted at geophysical monitoring applications.