Memristive systems can provide a novel strategy to conquer the von Neumann bottleneck by evaluating information where data are located in situ. To meet the rising of artificial neural network (ANN) demand, the implementation of memristor arrays capable of performing matrix multiplication requires highly reproducible devices with low variability and high reliability. Hence, we present an Ag/CuO/SiO₂/p-Si heterostructure device that exhibits both resistive switching (RS) and negative differential resistance (NDR). The memristor device was fabricated on p-Si and Indium Tin Oxide (ITO) substrates via cost-effective ultra-spray pyrolysis (USP) method. The quality of CuO nanoparticles was recognized by studying Raman spectroscopy. The topology information was obtained by scanning electron microscopy. The resistive switching and negative differential resistance were measured from current–voltage characteristics. The results were then compared with the Ag/CuO/ITO device to understand the role of native oxide. The interface barrier and traps associated with the defects in the native silicon oxide limited the current in the negative cycle. The barrier confined the filament rupture and reduced the reset variability. Reset was primarily influenced by the filament rupture and detrapping in the native oxide that facilitated smooth reset and NDR in the device. The resistive switching originated from traps in the localized states of amorphous CuO. The set process was mainly dominated by the trap-controlled space-charge-limited; this led to a transition into a Poole–Frenkel conduction. This research opens up new possibilities to improve the switching parameters and promote the application of RS along with NDR.

In this paper, a photodetector based on arrayed CdTe microdots was fabricated on Bi coated transparent conducting indium tin oxide (ITO)/glass substrates. Current-voltage characteristics of these photodetectors revealed an ultrahigh sensitivity under stress (in the form of force through press) while compared to normal condition. The devices exhibited excellent photosensing properties with photoinduced current increasing from 20 to 76 μA cm⁻² under stress. Furthermore, the photoresponsivity of the devices also increased under stress from 3.2 × 10⁻⁴ A/W to 5.5 × 10⁻³ A/W at a bias of 5 V. The observed characteristics are attributed to the piezopotential induced change in Schottky barrier height, which actually results from the piezo-phototronic effect. The obtained results also demonstrate the feasibility in realization of a facile and promising CdTe microdots-based photodetector via piezo-phototronic effect.

Designing photocathodes with nanostructures has been considered a promising way to improve the photoelectrochemical (PEC) water splitting activity. Cu₂Te is one of the promising semiconducting materials for photoelectrochemical water splitting, the performance of Cu₂Te photocathodes remains poor. In this work, we report the preparation of Cu₂Te nanorods (NRs) and vertical nanosheets (NSs) assembled film on Cu foil through a vapor phase epitaxy (VPE) technique. The obtained nano architectures as photocathodes toward photoelectrochemical (PEC) performance was tested afterwards for the first time. Optimized Cu₂Te NRs and NSs photocathodes showed significant photocurrent density up to 0.53 mA cm⁻² and excellent stability under illumination. Electrochemical impedance spectroscopy and Mott–Schottky analysis were used to analyze in more detail the performance of Cu₂Te NRs and NSs photocathodes. From these analyses, we propose that Cu₂Te NRs and NSs photocathodes are potential candidate materials for use in solar water splitting.

We propose and demonstrate that temperature-dependent curve-fitting error values of the Schottky diode I–V curve in the forward regime can be an auxiliary diagnostic signal as the temperature-scan Capacitance DLTS (CDLTS) signals and helps to work time-efficiently with high accuracy when using the Laplace Transform (LT)–DLTS or Isothermal Capacitance transient spectroscopy (ICTS) method. Using Be-doped GaAs showing overlapping DLTS signals, we verify that the LT–DLTS or ICTS analysis within a specific temperature range around the characteristic temperature $T_{peak}$ coincides well with the results of the CDLTS and Fourier Transform DLTS performed within the whole temperature range. In particular, we found that the LT–DLTS signals appeared intensively around $T_{peak}$, and we confirmed it with the ICTS result. The occurrence of the curve fitting error signal is attributed to the relatively increased misfit error by the increased thermal emission from the deep-level trap in the case near the $T_{peak}$, because the applied transport model excludes defect characteristics.