The construction of a large-scale quantum internet requires quantum repeaters containing multiple entangled photon sources with identical wavelengths. Semiconductor quantum dots can generate entangled photon pairs deterministically with high fidelity. However, realizing wavelength-matched quantum-dot entangled photon sources faces two difficulties: the non-uniformity of emission wavelength and exciton fine-structure splitting induced fidelity reduction. Typically, these two factors are not independently tunable, making it challenging to achieve simultaneous improvement. In this work, we demonstrate wavelength-tunable entangled photon sources based on droplet-etched GaAs quantum dots through the combined use of AC and quantum-confined Stark effects. The emission wavelength can be tuned by ~1 meV while preserving an entanglement fidelity f exceeding 0.955(1) in the entire tuning range. Based on this hybrid tuning scheme, we finally demonstrate multiple wavelength-matched entangled photon sources with f > 0.919(3), paving the way towards robust and scalable on-demand entangled photon sources for quantum internet and integrated quantum optical circuits.

Quantum emitters are a key component in photonic quantum technologies. Enhancing single-photon emission by engineering their photonic environment is essential for improving overall efficiency in quantum information processing. However, this enhancement is often limited by the need for ultraprecise emitter placement within conventional photonic cavities. Inspired by the fascinating physics of moiré pattern, we propose a multilayer moiré photonic crystal with a robust isolated flatband. Theoretical analysis reveals that, with nearly infinite photonic density of states, the moiré cavity simultaneously has a high Purcell factor and large tolerance over the emitter’s position, breaking the constraints of conventional cavities. We then experimentally demonstrate various cavity quantum electrodynamic phenomena with a quantum dot in moiré cavity. A large tuning range (up to 40-fold) of quantum dot’s radiative lifetime is achieved through strong Purcell enhancement and inhibition effects. Our findings open the door for moiré flatband cavity–enhanced quantum light sources and quantum nodes for the quantum internet.

Quantum dot (QD)-based single-photon emitter devices today are based on self-assembled random position nucleated QDs emitting at random wavelengths. Deterministic QD growth in position and emitter wavelength would be highly appreciated for industry-scale high-yield device manufacturing from wafers. Local droplet etching during molecular beam epitaxy is an all in situ method that allows excellent density control and predetermines the nucleation site of quantum dots. This method can produce strain-free GaAs QDs with excellent photonic and spin properties. Here, we focus on the emitter wavelength homogeneity. By wafer rotation-synchronized shutter opening time and adapted growth parameters, we grow QDs with a narrow peak emission wavelength homogeneity with no more than 1.2 nm shifts on a 45 mm diameter area and a narrow inhomogeneous ensemble broadening of only 2 nm at 4 K. The emission wavelength of these strain-free GaAs QDs is <800 nm, attractive for quantum optics experiments and quantum memory applications. We can use a similar random local droplet nucleation, nanohole drilling, and now, InAs infilling to produce QDs emitting in the telecommunication optical fiber transparency window around 1.3 µm, the so-called O-band. For this approach, we demonstrate good wavelength homogeneity and excellent density homogeneity beyond the possibilities of standard Stranski–Krastanov self-assembly. We discuss our methodology, structural and optical properties, and limitations set by our current setup capabilities.