The temperature dependence of the Seebeck coefficient, the electrical and thermal conductivities of individual β-silicon carbide nanowires produced by combustion in a calorimetric bomb were studied using a suspended micro-resistance thermometry device that allows four-point probe measurements to be conducted on each nanowire. Additionally, crystal structure and growth direction for each measured nanowire was directly obtained by transmission electron microscopy analysis. The Fermi level, the carrier concentration, and mobility of each nanostructure were determined using a combination of Seebeck coefficient and electrical conductivity measurements, energy band structure and transport theory calculations. The temperature dependence of the thermal and electrical conductivities of the nanowires was explained in terms of contributions from boundary, impurity, and defect scattering.

For hydrogen sensors built with pure Pd nanowires, the instabilities causing baseline drifting and temperature-driven sensing behavior are limiting factors when working within a wide temperature range. To enhance the material stability, we have developed superlattice-structured palladium and copper nanowires (PdCu NWs) with random-gapped, screw-threaded, and spiral shapes achieved by wet-chemical approaches. The microstructure of the PdCu NWs reveals novel superlattices composed of lattice groups structured by four-atomic layers of alternating Pd and Cu. Sensors built with these modified NWs show significantly reduced baseline drifting and lower critical temperature (259.4[emsp14]K and 261[emsp14]K depending on the PdCu structure) for the reverse sensing behavior than those with pure Pd NWs (287[emsp14]K). Moreover, the response and recovery times of the PdCu NWs sensor were of ~9 and ~7 times faster than for Pd NWs sensors, respectively.

Tin selenide (SnSe) has been the subject of great attention in the last years due to its highly efficient thermoelectricity and its possibilities as a green material, free of Pb and Te. Here, we report for the first time a thermoelectricity and transport study of individual SnSe micro- and nano-wires with diameters in the range between 130 nm and 1.15 μm. X-ray diffraction and transmission electron microscopy analyses confirm an orthorhombic SnSe structure with Pnma (62) symmetry group and 1:1 Sn:Se atomic ratio. Electrical and thermal conductivity and the Seebeck coefficient were measured in each individual nanowire using a specialized suspended microdevice in the 150–370 K temperature range, yielding a thermal conductivity of 0.55 Wm⁻¹ K⁻¹ at room temperature and ZT ~ 0.156 at 370 K for the 130 nm diameter nanowire. The measured properties were correlated with electronic information obtained by model simulations and with phonon scattering analysis. The results confirm these structures as promising building blocks to develop efficient temperature sensors, refrigerators and thermoelectric energy converters. The thermoelectric response of the nanowires is compared with recent reports on crystalline, polycrystalline and layered bulk structures.