A non-isolated high boost DC-DC converter topology based on a switched-capacitor (SC) structure is introduced in this paper. By controlling the duty cycle in each period, the voltage gain of the converter is adjusted. The main features of the proposed SC converter are the continuous input current, achieving high voltage gain with low voltage and current stress on the power components, no use of a high-frequency transformer, and easy to increase the voltage by adding the SC cell. To correct the operating analysis, a 200-W output power prototype was built with the input voltage in the range of [25 V, 50 V] and the output voltage of 200 V. The proposed inverter reaches a maximum efficiency of 93% at the input voltage of 25 V and the output power of 150 W. The simulation and experimental verifications match the analysis.

This paper presents a three-phase cascaded five-level H-bridge quasi-switched boost inverter (CHB-qSBI). The merits of the CHB-qSBI are as follows: single-stage conversion, shoot-through immunity, buck-boost voltage, and reduced passive components. Furthermore, a PWM control method is applied to the CHB-qSBI topology to improve the modulation index. The voltage stress across power semiconductor devices and the capacitor are significantly lower using improved pulse-width modulation (PWM) control. Additionally, by controlling individual shoot-through duty cycle, the DC-link voltage of each module can achieve the same values. As a result, the imbalance problem of the DC-link voltage can be solved. A detailed analysis and operating principle with the modulation scheme and comprehensive comparison for the CHB-qSBI are illustrated. The experimental and simulation results are presented to validate the operating principle of the three-phase CHB-qSBI.