The superconducting diode effect has garnered significant interest due to its prospective applications in cryogenic electronics and computing, enabling directional supercurrent transport. This phenomenon has been demonstrated across various superconducting platforms, which typically necessitate unconventional materials with broken spatial symmetries or external magnetic fields, posing scalability and integration challenges. This work introduces an innovative method to realize the superconducting diode effect by disrupting spatiotemporal symmetries in a conventional Josephson junction utilizing a biharmonic alternating-current (AC) drive signal. We achieve wireless modulation of the diode's polarity and efficiency with an antenna. Our findings indicate a diode efficiency reaching the ideal 100% over a broad frequency range, with a temperature resilience of up to 800 mK, and efficient AC signal rectification. This versatile and platform-independent superconducting diode signifies a promising component for advancing future superconducting digital electronics, including efficient logic gates, ultrafast switches, and dynamic half-wave supercurrent rectifiers.

The creation of atomically thin layers of non‐exfoliable materials remains a crucial challenge, requiring the development of innovative techniques. Here, confinement epitaxy is exploited to realize 2D gallium (gallenene) via intercalation in epitaxial graphene grown on silicon carbide. Both fabrication and characterization are conducted under ultra‐high vacuum conditions, unlike previous works on intercalated gallenene, to avoid gallium oxidation. Gallium is deposited on the graphene substrate via molecular beam epitaxy, and the intercalation is achieved by thermal treatments, leading to a homogeneous intercalation on almost the entire surface of the samples. Novel superstructures, including a striped and a hexagonal moiré pattern, are discovered and investigated via STM and LEED measurements. These structures arise from the interaction of gallenene with graphene and the silicon carbide substrate. The coexistence of different gallenene phases, including b010‐gallenene and the unprecedented 2D‐Ga(III) phase, is identified. This work sheds new light on the formation of 2D gallium and identifies a new tailored procedure for fabricating different phases of confined Ga, offering a platform for investigating the exotic electronic and optical properties of gallenene.

Indium Arsenide is a III–V semiconductor with low electron effective mass, a small band gap, strong spin–orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devices. Here, we report the epitaxial growth of very thin InAs layers with thicknesses ranging from 12.5 nm to 500 nm grown by Molecular Beam Epitaxy on In_xAl_1−xAs metamorphic buffers. Differently than InAs substrates, these buffers have the advantage of being insulating at cryogenic temperatures, which allows for multiple device operations on the same wafer and thus making the approach scalable. The structural properties of the InAs layers were investigated by high-resolution X-ray diffraction, demonstrating the high crystal quality of the InAs layers. Furthermore, their transport properties, such as total and sheet carrier concentration, sheet resistance, and carrier mobility, were measured in the van der Pauw configuration at room temperature. A simple conduction model was employed to quantify the surface, bulk, and interface contributions to the overall carrier concentration and mobility.