High-performance infrared thermal imaging devices are widely used in military, biomedical and other fields. Upconversion pixel-less imaging is promising for infrared imaging. In this paper, we propose a hybrid metasurface to achieve high upconversion efficiency of the integrated quantum well infrared photodetector and light-emitting diodes (QWIP-LED). Systematical investigations on the performance of the QWIP-LED, including optical coupling efficiency, light extraction efficiency, and upconversion efficiency, have been carried out via theoretical simulation. We also present the integration time for different devices with different optical coupling structures. Numerical results show that 45° edge-coupled QWIP-LED is not suitable for imaging applications for the low upconversion efficiency. Traditional grating-coupled QWIP-LED can be optimized for real-time thermal imaging. The hybrid-metasurface-based QWIP-LED can achieve a high frame rate above 300 Hz due to the enhanced upconversion efficiency. This work gives a precise description of QWIP-LED performance with different device structures and opens the way for large format upconversion pixel-less imaging.

Intersubband absorption is reported in a new modulation doped structure using strained InGaAs quantum wells (QWs) that support transistor operation. Well defined absorption peaks (1000 to $1700{\text{cm}}^{-1}$ ) from 8 to $11.5\mu \text{m}$ have been obtained using either $n$ -type or $p$ -type modulation doped wells. Both $n$ and $p$ well responses show strong polarization dependence with maximum values at incident angles of 65°–70° and peak positions which are adjusted by the QW parameters. The $p$ well shows a double peaked response with a peak separation of about $1.5\mu \text{m}$ which results from heavy and light hole contributions. The absorption data are compared with a theoretical model developed on the basis of variable $k$ conservation and excellent agreement is obtained. It is shown that a mass difference between the upper and lower states is essential to predict a finite spectral width of the response.

Self-mixing interference in a terahertz quantum-cascade laser has been demonstrated to be suitable for the detection of weak signals scattered or reflected by the target. This technology has achieved the high-sensitivity detection of complex refractive indices, surface/interface morphologies and molecular feature spectra. Here, a set of terahertz quantum-cascade lasers with different lasing frequencies is used to inspect a tiny amount of powder concealed inside a polytetrafluoroethylene tablet by using self-mixing interferometry combined with the penetration properties of terahertz waves. Multicolor spectral images were acquired, which were synthesized by absorption contrast images obtained at different lasing frequencies. They enable the detection of the spatial distribution of hidden objects which are totally opaque in visual light and allow for them to be identified with spectral absorption characteristics. Self-mixing interference technology can also obtain phase information when a terahertz wave interacts with a tablet, showing the difference between the hidden object and surroundings from another dimension. Our research may provide a strategy for the development of terahertz multispectral imaging technology for the inspection of hidden trace residues.

Broadband upconversion has various applications in solar photovoltaic, infrared and terahertz detection imaging, and biomedicine. The low efficiency of the light-emitting diodes (LEDs) limits the broadband upconversion performance. In this paper, we propose to use surface microstructures to enhance the electroluminescence efficiency (ELE) of LEDs. Systematical investigations on the cryogenic-temperature performances of microstructure-coupled LEDs, including electroluminescence efficiency, luminescence spectrum, and recombination rate, have been carried out by elaborating their enhancement mechanism and light emitting characteristics both experimentally and theoretically. We have revealed that the reason for the nearly 35% ELE enhancement of the optimized structure under cryogenic temperature and weak injection current is the efficient carrier injection efficiency and the high recombination rate in the active region. We also compare studies of the surface luminescence uniformity of the optimized LED with that of the unoptimized device. This work gives a precise description, and explanation of the performance of the optimized microstructure coupled LED at low temperatures, providing important guidance and inspiration for the optimization of broadband upconverter in the cryogenic temperature region.