The process of resist is of great importance to the resolution of e-beam direct-writing exposure. ZEP520 is an excellent positive e-beam resist, which has high resolution, high sensitivity, high contrast as well as good dry etch resistance. In this paper, the e-beam exposure process of ZEP520 on Si and GaAs substrates and its application in nanoelectrode-pair and single-electron transistor have been studied. On Si substrate, the contrast, sensitivity and resolution of ZEP520 have been investigated in detail, and the influence of exposure dose and resist thickness on the size of ZEP520 patterns has been discussed. The contrast of 425nm-thick ZEP520 on Si is 2.70. The sensitivity of ZEP520 is <5 μC/cm². The size of ZEP520 lines and circular holes decreases with exposure dose decreasing and thickness increasing. 70 nm wide lines and 110-nm-diameter dots can be exposed on Si substrate using 110 nm thick ZEP520. The flaws of ZEP520 on GaAs can be eliminated by fore-baking the GaAs substrate; and 130 nm wide lines can be exposed on GaAs using ZEP520. In regard to application, a nanoelectrode-pair with a 60 nm space has been fabricated using ZEP520. And a kind of in-plane singe-electron transistor (SET) has also been fabricated on silicon-on-insulator (SOI) substrate, which has a 110 nm wide Si Coulomb island and shows Clear Coulomb staircases in I _ds from the I _ds -V _ds characteristics and differential conductance (dI _ds /dV _ds ) oscillations from the dI _ds /dV _ds -V _ds characteristics at 2 K.

The ionic conductivity of a solid electrolyte for sodium-ion batteries is a hot topic nowadays. The lattice distortion introduced into the solid electrolyte produces high ionic conductivity. We attempted to introduce lattice distortion into Na ₃ OBr, a solid electrolyte for the sodium-ion batteries, by synthesizing Na ₃ O _{1− a} S _a Br in which the oxygen ions are partially replaced by sulfur ions. The solid electrolyte Na ₃ OBr has anti-perovskite structure, which makes it easy to manipulate the crystal structure. We have succeeded in synthesizing high purity Na ₃ O _{1− a} S _a Br a = 0 , 0.05 , 0.1 , 0.15 , 0.2 . The lattice distortions have been introduced to Na ₃ OBr.

In general, graphene is known to be thermally stable. In this study, we analyzed the Raman spectra of graphene prepared on copper (Cu) and nickel (Ni) by chemical vapor deposition (CVD) as well as monolayer and multilayer graphene transferred onto SiO₂ under vacuum heating. We observed a shift in the position of the graphene G peak due to temperature changes for all substrates. For graphene on insulating substrates, the peak position returned to its original position after heating when the substrate returned to room temperature, indicating the thermal and chemical stability of graphene. In contrast, the Raman spectra of graphene on Cu and Ni, which have different carbon solubilities, showed significant shifts and broadening of the G peak as the temperature increased. We also utilized optical microscopy to observe morphological changes during heating, which complemented the Raman spectroscopy analysis. The optical microscopy images obtained in the previous study revealed morphological changes on the graphene surface that correlate with the shifts observed in the Raman spectra, especially in graphene on metal substrates. These combined findings from Raman spectroscopy and optical microscopy could provide insights for optimizing graphene growth processes. In addition, knowledge of the thermal behavior of graphene on insulating substrates could be useful for device construction.