Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in various fields, such as power electronic devices, renewable energy systems, light-emitting diodes, and radio frequency (RF) electronic devices. For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. When a current flows through the transistor channels during operation, the self-heating effect (SHE) deriving from joule heat generation causes a significant increase in the temperature. Increases in the channel temperature reduce the carrier mobility and cause a shift in the threshold voltage, resulting in significant performance degradation. Moreover, temperature increases cause substantial lifetime reductions. Accordingly, GaN-based HEMTs are operated at a low power, although they have demonstrated high RF output power potential. The SHE is expected to be even more important in future advanced technology designs, such as gate-all-around field-effect transistor (GAAFET) and three-dimensional (3D) IC architectures. Materials with high thermal conductivities, such as silicon carbide (SiC) and diamond, are good candidates as substrates for heat dissipation in GaN-based semiconductors. However, the thermal boundary resistance (TBR) of the GaN/substrate interface is a bottleneck for heat dissipation. This bottleneck should be reduced optimally to enable full employment of the high thermal conductivity of the substrates. Here, we comprehensively review the experimental and simulation studies that report TBRs in GaN-on-SiC and GaN-on-diamond devices. The effects of the growth methods, growth conditions, integration methods, and interlayer structures on the TBR are summarized. This study provides guidelines for decreasing the TBR for thermal management in the design and implementation of GaN-based semiconductor devices.

This review presents the latest results of studies directed at photocatalyst coatings of titanium dioxide (TiO₂) prepared by mechanical coating technique (MCT) and its application. Compared with traditional coating techniques, MCT is a simple, low cost and useful coating formation process, which is proposed and developed based on mechanical frictional wear and impacts between substrate materials and metal powder particles in the bowl of planetary ball mill. The formation process of the metal coatings in MCT includes four stages: The nucleation by adhesion, the formation and coalescence of discrete islands, formation and thickening of continuous coatings, exfoliation of continuous coatings. Further, two-step MCT was developed based on the MCT concept for preparing composite coatings on alumina (Al₂O₃) balls. This review also discusses the influence on the fabrication of photocatalyst coatings after MCT and improvement of its photocatalytic activity: oxidation conditions, coating materials, melt salt treatment. In this review, the oxidation conditions had been studied on the oxidation temperature of 573 K, 673 K, 773 K, 873 K, 973 K, 1173 K and 1273 K, the oxidation time of 0.5 h, 1 h, 3 h, 10 h, 15 h, 20 h, 30 h, 40 h, and 50 h. The photocatalyst coatings showed the highest photocatalytic activity with the oxidation condition of 1073 K for 15 h. The metal powder of Ti, Ni and Cr had been used as the coating materials. The composite metal powder could affect the surface structure and photocatalytic activity. On the other hand, the melt salt treatment with KNO₃ is an effective method to form the nano-size structure and enhance photocatalytic activity, especially under visible light.

The photocatalyst composite coatings on alumina (Al₂O₃) balls had been prepared by mechanical coating technique (MCT) with titanium (Ti) powder, adding a certain content of chromium (Cr) powder and a subsequent oxidation process. The effect of oxidation conditions and adding Cr on the composite coatings of chromium-titanium dioxide (Cr-TiO₂) was investigated. The results show Cr-TiO₂ coatings are with mixed-phase of anatase and rutile under different oxidation conditions, and the mass fraction of the rutile phase (X_R) has been obviously increased when under 973 K. The SEM images indicate that adding Cr could significantly accelerate the growth of surface structures, especially at 1073 K. The photocatalytic activity of Cr-TiO₂ coatings firstly increases, then decreases, with the addition of Cr. Compared with that of two other oxidation conditions, the enhancement on photocatalytic activity by adding Cr under visible light is relatively higher, especially at 973 K for 10 h.