Laser sputtering of solid-state targets in a hydrogen atmosphere has been used to form semiconductor nanoheterostructures. Impurities (Te or Mn) in the form of delta-doped layers obtained by laser sputtering of the corresponding targets in the process of vapor-phase epitaxy using organometallic compounds can be introduced into light-emitting structures based on the InGaAs/GaAs system to make it possible to control the spectrum and the electroluminescence intensity. Reducing the hydrogen pressure in the reactor to 25-50Torr allows laser deposition to be carried out at reduced temperatures of the epitaxial layers of the base material and makes it possible to obtain GaAs and InAs semiconductors with a high manganese-doping level that demonstrate ferromagnetic properties at room temperature.

The development of new fabrication technologies for Ge–Si thermoelectric materials requires a corresponding theoretical description of physical processes lying behind the synthesis. In the present paper, we investigated the interdiffusion of Si and Ge atoms at the Ge/Si interface, which takes place during spark plasma sintering of Ge and Si powders for fabrication of thermoelectric bulk. The calculation was performed using numerical simulation based on the classical molecular dynamics method. The diffusion coefficients of Si in Ge and vice versa were found at sintering temperatures of 900 K–1300 K and an external pressure of 7 MPa. The calculation results were used to analyze the experimental data derived from the measurements of Ge and Si profiles at the interface of thin Ge/Si plates subjected to spark plasma sintering at the temperature of 1160 K (887 °C). The comparison of measured and calculated diffusion profiles has shown good agreement with one another.

A magnetic switch consisting of an integrated magnetoresistive element and a light-emitting diode has been developed and investigated. Switching the state of a magnetoresistive part allows one to control the electron vs hole current ratio in a light-emitting diode. In the high-resistance state, the hole current is high enough to trigger the electroluminescence. Switching to a low-resistance state decreases the hole current drastically, thus completely switching off the light-emitting diode. The effect was found to be strongly dependent on the operating current of the integrated circuit. We believe that the observed effect has multiple applications as a high-speed magnetic field sensor with an opto-coupler, a magnetic field visualizer, or an optical device for reading magnetoresistive random access memory.

The magnetic properties and micromagnetic structure of [Co/Pt]₁₀ multilayer magnetic films formed by independent variation of the Co and Pt layer thicknesses have been studied. The possibility of the film magnetization parameters manipulation was shown. It is found that the micromagnetic structure of the layers is significantly modified with a change in the thickness of the layers which correlates with the magnetization data. In particular, magnetic force microscopy revealed a system of magnetic skyrmions for a number of structures. The skyrmion density was found to be dependent on the growth conditions which in turn correlates with the shape of the magnetic hysteresis loop. Changing the thickness of the Co and Pt layers makes it possible to control the density of skyrmions in the range from 0.2 to 10.5 mkm^-2. Keywords: micromagnetic structure, skyrmions, CoPt films, electron beam evaporation.