Semiconductor-based gas sensors that use n-type WO₃ or p-type Co₃O₄ powder were fabricated and their gas sensing properties toward NO₂ or NO (0.5–5 ppm in air) were investigated at 100 °C or 200 °C. The resistance of the WO₃-based sensor increased on exposure to NO₂ and NO. On the other hand, the resistance of the Co₃O₄-based sensor varied depending on the operating temperature and the gas species. The chemical states of the surface of WO₃ or those of the Co₃O₄ powder on exposure to 1 ppm NO₂ and NO were investigated by diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy. No clear differences between the chemical states of the metal oxide surface exposed to NO₂ or NO could be detected from the DRIFT spectra.