This research explores the modification of marl by the incorporation of diopside (CaMgSi₂O₆) to develop a composite material with improved dielectric properties, while addressing environmental and economic challenges through the use of abundant natural resources. X-ray fluorescence (XRF) analysis reveals a high silicate content in the raw marl, mainly SiO₂ (68.12%) and Al₂O₃ (12.54%), while laser particle size analysis indicates a homogeneous grain size distribution centered around 100 µm. The composite was synthesized by the solid-state reaction method, achieving good phase homogeneity. X-ray diffraction (XRD) and infrared spectroscopy confirm the incorporation of diopside, while SEM analysis shows a porous morphology with granular aggregates. The modified material has an average particle size of 11.653 µm, optimizing the electrical properties. Impedance spectroscopy demonstrates improved dielectric performance, with accumulated permittivity and reduced losses, which improves energy storage and dissipation. Tests showed the remarkable stability of dielectric properties over a wide frequency range (10 Hz to 10 MHz) and low-temperature dependence. The performance was demonstrated on a single sample with a thickness of 0.63 mm, demonstrating consistent efficiency. These results position the diopside-modified marl as a promising candidate for electrochemical and microelectronic applications.

Mullite (Al₆Si₂O₁₃), an aluminosilicate with remarkable thermal and dielectric properties, is a promising material for advanced electronic applications. This study focuses on a sintered mullite composite and examines its structural, morphological, dielectric, and electrical properties. X-ray diffraction and scanning electron microscopy analyses confirm a well-defined crystalline structure and a homogeneous microstructure. Impedance spectroscopy measurements reveal a high relative permittivity at low frequencies, dominated by interfacial and jump polarization mechanisms. Electrical conductivity follows Jonscher’s double-power law, reflecting mixed ionic and electronic conduction due to contributions from grains and grain boundaries. Analysis of the Nyquist diagrams shows a marked decrease in resistances with increasing temperature: The grain resistance decreases from 21.87 MΩ to 4.85 MΩ, while that of the grain boundaries decreases from 89.44 MΩ to 5.94 MΩ between 450 °C and 900 °C. In addition, the relative permittivity increases sharply with temperature, from 25 × 10³ to 350 × 10³ at 1 kHz and from 200 to 1 × 10³ at 1 MHz over the same temperature range, highlighting the dominant influence of temperature and low frequencies on polarization mechanisms. These results confirm the strong potential of sintered mullite for electronic applications. The activation energy of the grain and grain boundary were determined to be E_a,g = 0.18 eV and E_a,bg = 0.22 eV, respectively.

Cordierite-based ceramics (Mg₂Al₄Si₅O₁₈) were successfully synthesized and comprehensively characterized to evaluate their structural and dielectric behavior for high-temperature electronic applications. Morphological, microstructural and vibrational analyses confirm the high phase purity and structural integrity of the synthesized material. Dielectric measurements reveal high real permittivity (ε′) values at low frequencies and elevated temperatures, mainly attributed to interfacial polarization arising from Schottky-type barriers at grain–grain and surface–volume interfaces, underscoring the crucial influence of heterogeneous interfaces on the dielectric response. The electrical conductivity follows a thermally activated hopping mechanism involving both intra-grain and grain-boundary charge transport. Analysis of the electric modulus formalism provides further insight into relaxation dynamics: the real (M′) and imaginary (M″) components highlight pronounced space-charge effects, with M″ exhibiting a distinct relaxation peak (M″) associated with grain contributions. The systematic shift of this peak toward higher frequencies with increasing temperature indicates enhanced charge-carrier mobility and a strongly thermally activated relaxation process. The frequency-dependent conductivity displays two regimes: a low-frequency plateau corresponding to dc conductivity and a high-frequency dispersive region following a power-law behavior characteristic of hopping conduction, with power-law exponents (α₁ and α₂) markedly lower than unity, confirming the non-Debye character of the relaxation processes. The hopping frequency (ω) increases with temperature, further supporting the thermally activated nature of charge transport. Activation energies extracted from Arrhenius plots of dc conductivity are 0.88 eV for grain boundaries and 0.83 eV for grains, demonstrating that both microstructural regions significantly contribute to the overall conduction process.