Controlling quantum defects in graphene: The development of quantum technologies relies on the ability to fabricate and engineer materials with robust quantum properties. The controlled introduction of defects in semiconductors is one of the most promising platforms under development. With the capability to precisely position point defects (five-membered rings) in the graphene honeycomb lattice, Lombardi et al. explored recent theoretical work suggesting that such defects should display enhanced quantum properties (see the Perspective by von Kugelgen and Freedman). The spin-bearing properties of the defects and the engineered control of their interactions open up exciting possibilities for graphene-based spintronics and quantum electronics. Science , this issue p. 1107 ; see also p. 1070

The realization of novel electronic devices based on 2D materials, i.e., field-effect transistors, has recently stimulated a renewed interest regarding ultrathin fluoride epitaxial films. Thanks to their chemical and dielectric properties, ionic fluorides could have the potential to be used as insulators in many applications that require high processing control down to the nanoscale. Here we provide a review of some of the principal results that have been achieved in the past decades regarding the controlled growth of epitaxial fluorides on different types of materials relevant for electronics. The aim is to provide a concise summary of the growth modes, crystallinity, film morphologies, and chemical interactions of different types of fluorides on different type of substrates, highlighting the possibilities of applications and the future perspectives.