Prachi Sharma

Dr. Prachi Sharma

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Research Focus & Metrics

Academic Career Length

4Years (2023-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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21 May 2023 in Sensors
Verified
Journal Article
Open access
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MTMohammad Talib
Mohammad Talib
Nishant TripathiNishant Tripathi
Nishant Tripathi
SMSamrah Manzoor
Samrah Manzoor
PSPrachi Sharma
Prachi Sharma
Vladimir PavelyevVladimir Pavelyev
Vladimir Pavelyev
PMPrabhash Mishra
Prabhash Mishra
Photodetectors that can operate over a wide range of temperatures, from cryogenic to elevated temperatures, are crucial for a variety of modern scientific fields, including aerospace, high-energy science, and astro-particle science. In this study, we investigate the temperature-dependent photodetection properties of titanium trisulfide (TiS3)- in order to develop high-performance photodetectors that can operate across a wide range of temperatures (77 K–543 K). We fabricate a solid-state photodetector using the dielectrophoresis technique, which demonstrates a quick response (response/recovery time ~0.093 s) and high performance over a wide range of temperatures. Specifically, the photodetector exhibits a very high photocurrent (6.95 × 10−5 A), photoresponsivity (1.624 × 108 A/W), quantum efficiency (3.3 × 108 A/W·nm), and detectivity (4.328 × 1015 Jones) for a 617 nm wavelength of light with a very weak intensity (~1.0 × 10−5 W/cm2). The developed photodetector also shows a very high device ON/OFF ratio (~32). Prior to fabrication, the TiS3 nanoribbons were synthesized using the chemical vapor technique and characterized according to their morphology, structure, stability, and electronic and optoelectronic properties; this was performed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, X-ray diffraction (XRD), thermogravimetric analysis (TGA), and a UV–Visible–NIR spectrophotometer. We anticipate that this novel solid-state photodetector will have broad applications in modern optoelectronic devices.

24 May 2026 in Scientific Reports
Verified
Journal Article
Open access
TDTushar Dudeja
Tushar Dudeja
PSPrachi Sharma
Prachi Sharma
This study investigated the localization accuracy of Grad-CAM as an Explainable AI (XAI) technique for industrial inspection, specifically evaluating it on the WM811K semiconductor wafer defect dataset - a large-scale, publicly available collection of 25,519 labeled wafer maps. Localization performance was measured using the Top-10% Intersection over Union (IoU) metric on a held-out test sample ([Formula: see text]), yielding a baseline accuracy of 0.129. A consistent radial attribution bias was observed across both Grad-CAM and XGrad-CAM, with both methods producing structurally similar bias profiles, suggesting the bias reflects a property of the model's learned representations rather than a gradient-weighting artifact. To address the radial attribution bias, the authors implemented a radial suppression method, which improved the average Top-10% IoU by 19.4% (from 0.129 to 0.155), verified through a two-tailed paired t-test ([Formula: see text]). Class-level analysis revealed significant improvements for edge-ring defects while other defect types remained stable. Finally, an oracle-based refinement demonstrated that geometric representation characteristics account for a substantial portion of residual localization errors, establishing an upper bound of 0.278 IoU.