Photodetectors that can operate over a wide range of temperatures, from cryogenic to elevated temperatures, are crucial for a variety of modern scientific fields, including aerospace, high-energy science, and astro-particle science. In this study, we investigate the temperature-dependent photodetection properties of titanium trisulfide (TiS3)- in order to develop high-performance photodetectors that can operate across a wide range of temperatures (77 K–543 K). We fabricate a solid-state photodetector using the dielectrophoresis technique, which demonstrates a quick response (response/recovery time ~0.093 s) and high performance over a wide range of temperatures. Specifically, the photodetector exhibits a very high photocurrent (6.95 × 10−5 A), photoresponsivity (1.624 × 108 A/W), quantum efficiency (3.3 × 108 A/W·nm), and detectivity (4.328 × 1015 Jones) for a 617 nm wavelength of light with a very weak intensity (~1.0 × 10−5 W/cm2). The developed photodetector also shows a very high device ON/OFF ratio (~32). Prior to fabrication, the TiS3 nanoribbons were synthesized using the chemical vapor technique and characterized according to their morphology, structure, stability, and electronic and optoelectronic properties; this was performed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, X-ray diffraction (XRD), thermogravimetric analysis (TGA), and a UV–Visible–NIR spectrophotometer. We anticipate that this novel solid-state photodetector will have broad applications in modern optoelectronic devices.
1 November 2019 in Journal of Physics: Conference Series
The analysis and optimization of optical devices manufacturing technologies based on carbon nanotubes intended for work in the visible range were carried out. These processes studied in the work have practical application for the deposition of carbon nanotubes and their subsequent use as materials for prototypes of the waveguide and sensor of the visible range. To obtain a layer of carbon nanotubes, a chemical vapor deposition chamber was used. A dense horizontal network of CNTs was grown on silicon wafer by utilizing sandwich type catalyst structure. The growth was carried out with two variable parameters: flow rate and flow duration. Various aspects of the CNTs synthesis, mechanism of CNTs growth and power dependent laser sensing are considered in this article. The remarkable properties of as developed photo detector are its fast response and recovery time with 8% sensitivity.