Nishant Tripathi

Dr. Nishant Tripathi

Department of Nanoengineering, Samara National Research University, 443086 Samara, Russia
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Research Focus & Metrics

Academic Career Length

13Years (2014-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 June 2021 in Materials Science in Semiconductor Processing
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Journal Article
Closed access
Nishant TripathiNishant Tripathi
Nishant Tripathi
VPVladimir Pavelyev
Vladimir Pavelyev
PSPrachi Sharma
Prachi Sharma
SKSunil Kumar
Sunil Kumar
ARAnastasiia Rymzhina
Anastasiia Rymzhina
PMPrabhash Mishra
Prabhash Mishra

15 February 2020 in Journal of Materials Science: Materials in Electronics
Verified
Journal Article
Closed access
PDF file
PSPrachi Sharma
Prachi Sharma
Vladimir PavelyevVladimir Pavelyev
Vladimir Pavelyev
SKSunil Kumar
Sunil Kumar
PMPrabhash Mishra
Prabhash Mishra
SIS. S. Islam
S. S. Islam
Nishant TripathiNishant Tripathi
Nishant Tripathi

12 January 2023 in Journal of Materials Science: Materials in Electronics
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Journal Article
Closed access
PDF file
AGA. Gorshkova
A. Gorshkova
MGM. Gorshkov
M. Gorshkov
Nishant TripathiNishant Tripathi
Nishant Tripathi
KTK. Tukmakov
K. Tukmakov
VPV. Podlipnov
V. Podlipnov
NDN. A. Djuzhev
N. A. Djuzhev

8 October 2022 in Journal of Materials Science: Materials in Electronics
Verified
Journal Article
Closed access
PDF file
VPVladimir Pavelyev
Vladimir Pavelyev
PSPrachi Sharma
Prachi Sharma
ARAnastasiia Rymzhina
Anastasiia Rymzhina
PMPrabhash Mishra
Prabhash Mishra
Nishant TripathiNishant Tripathi
Nishant Tripathi

21 May 2023 in Sensors
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Journal Article
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MTMohammad Talib
Mohammad Talib
Nishant TripathiNishant Tripathi
Nishant Tripathi
SMSamrah Manzoor
Samrah Manzoor
PSPrachi Sharma
Prachi Sharma
Vladimir PavelyevVladimir Pavelyev
Vladimir Pavelyev
PMPrabhash Mishra
Prabhash Mishra
Photodetectors that can operate over a wide range of temperatures, from cryogenic to elevated temperatures, are crucial for a variety of modern scientific fields, including aerospace, high-energy science, and astro-particle science. In this study, we investigate the temperature-dependent photodetection properties of titanium trisulfide (TiS3)- in order to develop high-performance photodetectors that can operate across a wide range of temperatures (77 K–543 K). We fabricate a solid-state photodetector using the dielectrophoresis technique, which demonstrates a quick response (response/recovery time ~0.093 s) and high performance over a wide range of temperatures. Specifically, the photodetector exhibits a very high photocurrent (6.95 × 10−5 A), photoresponsivity (1.624 × 108 A/W), quantum efficiency (3.3 × 108 A/W·nm), and detectivity (4.328 × 1015 Jones) for a 617 nm wavelength of light with a very weak intensity (~1.0 × 10−5 W/cm2). The developed photodetector also shows a very high device ON/OFF ratio (~32). Prior to fabrication, the TiS3 nanoribbons were synthesized using the chemical vapor technique and characterized according to their morphology, structure, stability, and electronic and optoelectronic properties; this was performed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, X-ray diffraction (XRD), thermogravimetric analysis (TGA), and a UV–Visible–NIR spectrophotometer. We anticipate that this novel solid-state photodetector will have broad applications in modern optoelectronic devices.

1 November 2019 in Journal of Physics: Conference Series
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Conference Paper
Open access
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Nishant TripathiNishant Tripathi
Nishant Tripathi
Vladimir PavelyevVladimir Pavelyev
Vladimir Pavelyev
VBV S But
V S But
SLS A Lebedev
S A Lebedev
SKSunil Kumar
Sunil Kumar
VPV Platonov
V Platonov
The analysis and optimization of optical devices manufacturing technologies based on carbon nanotubes intended for work in the visible range were carried out. These processes studied in the work have practical application for the deposition of carbon nanotubes and their subsequent use as materials for prototypes of the waveguide and sensor of the visible range. To obtain a layer of carbon nanotubes, a chemical vapor deposition chamber was used. A dense horizontal network of CNTs was grown on silicon wafer by utilizing sandwich type catalyst structure. The growth was carried out with two variable parameters: flow rate and flow duration. Various aspects of the CNTs synthesis, mechanism of CNTs growth and power dependent laser sensing are considered in this article. The remarkable properties of as developed photo detector are its fast response and recovery time with 8% sensitivity.