Diamond is a semiconductor with a large band gap (5.48 eV), high carrier mobility (the highest for holes), high electrical resistance and low capacitance. Thanks to its outstanding properties, diamond-based detectors offer several advantages, among others: high signal-to-noise ratio, fast response, intrinsic pulse-shape discrimination capabilities for distinguishing different types of radiation, as well as operation in pulse and current modes. The mentioned properties meet most of the demanding requests that a radiation detection material must fulfil. Diamond detectors are suited for detecting almost all types of ionizing radiation including X-ray and UV photons, resulting also in blindness to visible photons and are used in a wide range of applications including ones requiring the capability to withstand harsh environments. After reviewing the fundamental physical properties of synthetic single crystal diamond (SCD) grown by microwave plasma enhanced chemical vapor deposition (MWPECVD) technique and the basic principles of diamond-photon interactions and detection, the paper focuses on SCD detectors developed for X-ray and UV detection, discussing their configurations, construction techniques, advantages, and drawbacks. Applications ranging from X-ray detection around accelerators to UV detection for fusion plasmas are addressed, and future trends are highlighted too.

A multi-strip detector made of synthetic single crystal diamond (SCD), based on a p-type/intrinsic diamond/Schottky metal transverse configuration and operating at zero bias voltage, was developed for imaging from extreme UV (EUV) to soft X-rays. The photodetector was patterned with 32 strips made of boron-doped diamond directly deposited, by means of the CVD technique and the standard lithographic technique, on top of the HPHT diamond growth substrate. The width of each strip and the gap between two adjacent strips were 100 μm and 20 μm, respectively. The strips were embedded in intrinsic SCD of an active area of 3.2 × 2.5 mm², also deposited using the CVD technique in a separate growing machine. In the present structure, the prototype photodetector is suitable for 1D imaging. However, all the dimensions above can be varied depending on the applications. The use of p-type diamond strips represents an attempt to mitigate the photoelectron emission from metal contacts, a non-negligible problem under EUV irradiation. The detector was tested with UV radiation and soft X-rays. To test the photodetector as an imaging device, a headboard (XDAS-DH) and a signal processing board (XDAS-SP) were used as front-end electronics. A standard XDAS software was used to acquire the experimental data. The results of the tests and the detector’s construction process are presented and discussed in the paper.