Induced pluripotent stem cells (iPSCs) generated from somatic cell sources are pluripotent and capable of indefinite expansion in vitro. They provide an unlimited source of cells that can be differentiated into lung progenitor cells for the potential clinical use in pulmonary regenerative medicine. This review gives a comprehensive overview on recent progress toward the use of iPSCs to generate proximal and distal airway epithelial cells and mix lung organoids. Further, their potential applications and future challenges for the field are discussed, with a focus on the technological hurdles that must be cleared before stem cell therapeutics could be used for clinical treatment.

This paper proposes a 1200V 4H-SiC MOSFET incorporating a High-K dielectric-integrated fused source-gate (HKSG) structure, engineered to concurrently enhance the third-quadrant operation and high-frequency figure of merit (HF-FOM). The High-K dielectric enhances the electric field effect, reducing the threshold voltage of the source-gate. As a result, the reverse conduction voltage drops from 2.79 V (body diode) to 1.53 V, and the bipolar degradation is eliminated. Moreover, by incorporating a shielding area within the merged source-gate architecture, the gate-to-drain capacitance C_gd of the HKSG-MOS is reduced. The simulation results show that the HF-FOM C_gd × R_on,sp and Q_gd × R_on,sp of the HKSG-MOS are decreased by 48.1% and 58.9%, respectively, compared with that of conventional SiC MOSFET. The improved performances make the proposed SiC MOSFEET have great potential in high-frequency power applications.