On-chip integrated mode-division multiplexing (MDM) is an emerging technique for large-capacity data communications. In the past few years, while several configurations have been developed to realize on-chip MDM circuits, their practical applications are significantly hindered by the large footprint and inter-mode cross talk. Most importantly, the high-speed MDM signal transmission in an arbitrarily routed circuit is still absent. Herein, we demonstrate the MDM circuits based on digitized meta-structures which have extremely compact footprints. 112 Gbit/s signals encoded on each mode are arbitrarily routed through the circuits consisting of many sharp bends and compact crossings with a bit error rate under forward error correction limit. This will significantly improve the integration density and benefit various on-chip multimode optical systems.
Recently, 2-μm wave band has gained increasing interest due to its potential application for next-generation optical communication. But the development of 2-μm optical communications is substantially hampered by the modulation speed due to the device bandwidth constraints. Thus, a high-speed modulator is highly demanded at 2 μm. Motivated by this prospect, we demonstrate a high-speed silicon Mach–Zehnder modulator for a 2-μm wave band. The device is configured as a single-ended push–pull structure with waveguide electrorefraction via the free carrier plasma effect. The modulator was fabricated via a multiproject wafer shuttle run at a commercial silicon photonic foundry. The modulation efficiency of a single arm is measured to be . The high-speed characterization is also performed, and the modulation speed can reach 80 Gbit/s with 4-level pulse amplitude modulation (PAM-4) formats.
Very sharp 90° micro-bends for adiabatic optical wave propagation in multimode waveguides are demonstrated by an inverse design method, and the devices are fabricated on a silicon-on-insulator platform. The compact bending structures are based on digital waveguide metastructures with footprints as small as . For waveguides with widths of 2 μm and bending radii of only 1 μm, the mode is able to turn around the sharp corner with 1 dB loss and suppression ratio to higher-order modes. The transmission spectra of the devices are measured with loss over a 40 nm bandwidth which are consistent with the numerical simulations.
Two-dimensional (2D) layered semiconductors with nonlinear optical (NLO) properties hold great promise to address the growing demand of multifunction integration in electronic-photonic integrated circuits (EPICs). However, electronic-photonic co-design with 2D NLO semiconductors for on-chip telecommunication is limited by their essential shortcomings in terms of unsatisfactory optoelectronic properties, odd-even layer-dependent NLO activity and low NLO susceptibility in telecom band. Here we report the synthesis of 2D SnP2Se6, a van der Waals NLO semiconductor exhibiting strong odd-even layer-independent second harmonic generation (SHG) activity at 1550 nm and pronounced photosensitivity under visible light. The combination of 2D SnP2Se6 with a SiN photonic platform enables the chip-level multifunction integration for EPICs. The hybrid device not only features efficient on-chip SHG process for optical modulation, but also allows the telecom-band photodetection relying on the upconversion of wavelength from 1560 to 780 nm. Our finding offers alternative opportunities for the collaborative design of EPICs.
Hollow-core fiber (HCF) has been attracting broad interests in recent decades, and has extended the communication window to longer wavelength, 2 micron. In this paper, we present a demonstration of low-latency HCF short-reach optical interconnection at 2 micron, achieving a high single-lane speed of 100 Gbps. High physical speed (near vacuum-light-speed) and high information speed (100-Gbps) optical interconnection with 100-m transmission distance is experimentally achieved with error-free performance. Probabilistically shaped discrete multi-tone (PS-DMT) modulation with entropy loading is employed to accommodate the deteriorated frequency response caused by the mode dispersion in HCF. Compared with conventional solid-core fiber (SCF), HCF contributes 30.95% (1.5-'s per kilometer) latency reduction for the physical link. The system level latency reduction is 28% for 1-km interconnection distance (11% for 100-m), with respect to a microsecond-scale switching network for typical datacenter applications. This work substantially leaps over the 100G milestone of 2-micron HCF optical interconnection, and shows the potentiality with lower latency and further higher capacity.
6 January 2020 in IEEE Photonics Technology Letters