Koichi Kakimoto

Prof. Koichi Kakimoto

Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga Fukuoka 816-8580, Japan

Research Focus & Metrics

Academic Career Length

31Years (1996-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

View All Publications
14 April 2014 in Applied Physics Letters
Verified
Journal Article
Closed access
PDF file
ANAkira Nagaoka
Akira Nagaoka
HMHideto Miyake
Hideto Miyake
TTTomoyasu Taniyama
Tomoyasu Taniyama
Koichi KakimotoKoichi Kakimoto
Koichi Kakimoto
YNYoshitaro Nose
Yoshitaro Nose
KYKenji Yoshino
Kenji Yoshino
We have studied the effect of sodium on the electrical properties of Cu2ZnSnS4 (CZTS) single crystal by using temperature dependence of Hall effect measurement. The sodium substitution on the cation site in CZTS is observed from the increasing of unit-cell size by powder X-ray diffraction. Sodium increases the effective hole concentration and makes the thermal activation energy smaller. The degree of compensation decreases with sodium incorporation, thus the hole mobility is enhanced. We revealed that sodium is important dopant in CZTS to control the electrical properties.

1 April 2009 in MRS Bulletin
Verified
Journal Article
Closed access
PDF file
PRP. Rudolph
P. Rudolph
Koichi KakimotoKoichi Kakimoto
Koichi Kakimoto

25 May 2004 in Journal of Crystal Growth
Verified
Journal Article
Closed access
AMAtsushi Murakawa
Atsushi Murakawa
HIHideo Ishii
Hideo Ishii
Koichi KakimotoKoichi Kakimoto
Koichi Kakimoto

15 August 2017 in Materials
Verified
Journal Article
Open access
PDF file
AKAkira Kusaba
Akira Kusaba
GLGuanchen Li
Guanchen Li
MSMichael R Von Spakovsky
Michael R Von Spakovsky
YKYoshihiro Kangawa
Yoshihiro Kangawa
Koichi KakimotoKoichi Kakimoto
Koichi Kakimoto
Clearly understanding elementary growth processes that depend on surface reconstruction is essential to controlling vapor-phase epitaxy more precisely. In this study, ammonia chemical adsorption on GaN(0001) reconstructed surfaces under metalorganic vapor phase epitaxy (MOVPE) conditions (3Ga-H and Nad-H + Ga-H on a 2 × 2 unit cell) is investigated using steepest-entropy-ascent quantum thermodynamics (SEAQT). SEAQT is a thermodynamic-ensemble based, first-principles framework that can predict the behavior of non-equilibrium processes, even those far from equilibrium where the state evolution is a combination of reversible and irreversible dynamics. SEAQT is an ideal choice to handle this problem on a first-principles basis since the chemical adsorption process starts from a highly non-equilibrium state. A result of the analysis shows that the probability of adsorption on 3Ga-H is significantly higher than that on Nad-H + Ga-H. Additionally, the growth temperature dependence of these adsorption probabilities and the temperature increase due to the heat of reaction is determined. The non-equilibrium thermodynamic modeling applied can lead to better control of the MOVPE process through the selection of preferable reconstructed surfaces. The modeling also demonstrates the efficacy of DFT-SEAQT coupling for determining detailed non-equilibrium process characteristics with a much smaller computational burden than would be entailed with mechanics-based, microscopic-mesoscopic approaches.

6 September 2007 in Crystal Research and Technology
Verified
Journal Article
Closed access
PDF file
XCX. J. Chen
X. J. Chen
LLL. J. Liu
L. J. Liu
HTH. Tezuka
H. Tezuka
YUY. Usuki
Y. Usuki
Koichi KakimotoKoichi Kakimoto
Koichi Kakimoto