Transition metal dichalcogenide based 2D/2D or 2D/3D van der Waals heterostructures exhibit superior properties for high-performance electronics, tunneling transistors, and catalysts. Here, we report on the fabrication of high quality 2D/3D MoS₂/MoO₂ heterostructures with an atomic clean interface by one-step chemical vapor deposition. Optical microscopy, atomic force microscopy, Raman spectroscopy, scanning electron microscopy, and energy dispersive spectroscopy measurements reveal the high-quality of as-grown samples and the specific epitaxial relationship between MoS₂ and MoO₂: MoS₂[$\overline{1}\overline{1}$ 20]//MoO₂[001] and MoS₂[$\overline{1}$ 100]//MoO₂[201]. Photoluminescence and Kelvin probe force microscopy measurements combined with density functional theory calculations confirm the interfacial charge transfer from MoS₂ to the underlying MoO₂. Furthermore, MoO₂ induced in-plane anisotropy in MoS₂ was revealed using angle-resolved polarized Raman and photoluminescence spectroscopy with anisotropic ratios of 1.27 (Raman) and 1.29 (photoluminescence), respectively, which is most possibly attributed to anisotropic interfacial charge interactions. Our findings provide an excellent platform for the investigation on interfacial effects. Moreover, the in-plane anisotropy in MoS₂ induced by MoO₂ has expanded the application of isotropic MoS₂ in the polarization-dependent fields.

Twisted isotropic-anisotropic van der Waals heterostructures provide a platform for controlling the electronic and phononic properties of 2D materials and inducing in-plane anisotropy in some isotropic materials. Herein, angle-resolved polarized Raman spectroscopy and photoluminescence spectroscopy are used to investigate the induced in-plane anisotropy of the quasiparticles in the twisted MoS2/CrOCl heterostructures. Both the phonons (Eg2 MoS2 and Ag1 MoS2 modes) and excitons (A and B excitons) in MoS2 represent a strong in-plane orientation dependence, and the maximum intensities are along the [100]CrOCl. The induced anisotropy ratios of phonons vary continuously in the range from 1.22 to 1.13 for the Eg2 MoS2 mode and 1.15 to 1.09 for the Ag1 MoS2 mode with changing twisted angles, which originate from the anisotropic carrier mobility induced by the localized charge distribution from the anisotropic CrOCl substrates, and are further tuned by the uniaxial local limit of charge carriers caused by 1D moiré pattern. Our findings provide a way to controllably regulate the induced in-plane optical anisotropy in heterostructures.

This study constructs a symmetry-breaking interface by stacking WS ₂ onto anisotropic CrOCl and observes an in-plane bulk photovoltaic effect with photocurrent anisotropy ratio 3.29, originating from in-plane polarization.

Few-layer black phosphorus (BP) holds significant potential for next-generation electronics due to its tunable bandgap and high carrier mobility. The layer modulation of BP is essential in the applications of electronic devices ascribed to its thickness-dependent electronic properties. However, precisely controlling its thickness still presents a challenge for optimizing performance. In this study, we demonstrate that BP can be precisely thinned when exposed to dry oxygen (40% humidity, low oxygen concentration) in a dark environment, which is different from that exposed to humid oxygen (100% humidity, low oxygen concentration) without light illumination. The thinned BP not only demonstrates enhanced stability but also exhibits significant improvements in its electrical properties. The variation in bandgap from 0.3 to 2 eV, resulting in the I_ON/I_OFF ratio increased from 10³ to 10⁶, and the hole mobility improved from 235 cm² V⁻¹ s⁻¹ to 851 cm² V⁻¹ s⁻¹, was ascribed to the layer-by-layer thinning and p-type doping effects induced by the formed P_xO_y. Our finding demonstrates significant potential of BP in future nanoelectronic and optoelectronic applications.

Flexible and binderless electrodes have become a promising candidate for the next generation of flexible power storage devices. However, developing high-performance electrode materials with high energy density and a long cycle life remains a serious challenge for sodium-ion batteries (SIBs). The main issue is the large volume change in electrode materials during the cycling processes, leading to rapid capacity decay for SIBs. In this study, flexible electrodes for a SnSb alloy–carbon nanofiber (SnSb@NC) membrane were successfully synthesized with the aid of hydrothermal, electrospinning and annealing processes. The as-prepared binderless SnSb@NC flexible anodes were investigated for the storage properties of SIBs at 500 °C, 600 °C and 700 °C (SnSb@NC-500, SnSb@NC-600 and SnSb@NC-700), respectively. And the flexible SnSb@NC-700 electrode displayed the preferable SIB performances, achieving 240 mAh/g after 100 cycles at 0.1 A g⁻¹. In degree-dependent I-V curve measurements, the SnSb@NC-700 membrane exhibited almost the same current at different bending degrees of 0°, 45°, 90°, 120° and 175°, indicating the outstanding mechanical properties of the flexible binderless electrodes.