The effect of high- and low-temperature conditions on the performance of IGZO TFT and logic circuits were investigated in this work. In the temperature range of 250−350 K, the performance of the IGZO TFT did not show significant changes and exhibited a certain degree of high- and low-temperature resistance. When the temperature was below 250 K, as the temperature decreased, the threshold voltage (V_TH) of the IGZO TFT significantly increased, the field effect mobility (μ_FE) and the on state current (I_ON) significantly decreased. This is attributed to the lower excitation degree of charge carriers at extremely low temperatures, resulting in fewer charge carriers transitioning to the conduction or valence bands, and the formation of defects also limits carrier migration. When the temperature exceeded 350 K, as the temperature increased, more electrons could escape from the bandgap trap state and become free charge carriers, and the IGZO layer was thermally excited to produce more oxygen vacancies, resulting in higher μ_FE and lower V_TH. In addition, the drain current noise spectral density of IGZO TFT conformed to the 1/ƒ noise characteristic, and the degradation mechanism of IGZO TFT over a wide temperature range was confirmed based on the changes in noise spectral density at different temperatures. In addition, an inverter logic unit circuit was designed based on IGZO TFT, and the performance changes over a wide temperature range were analyzed. This lays the foundation for IGZO TFT to be applied in integrated circuits with harsh environments.

Temperature/pH dual-responsive hydrogels are a class of smart materials capable of undergoing reversible structural or functional changes in response to temperature and pH stimuli. Owing to their remarkable dual-stimuli-responsive characteristics, these hydrogels have demonstrated significant potential in various biomedical applications, including drug delivery, tissue engineering, and diagnostics technologies, making them a prominent research focus. Although considerable progress has been made in recent years, a systematic summary of the preparation methods, structural design strategies and complex biomedical applications of these materials remains conspicuously absent. Consequently, this review aims to comprehensively examine the latest advancements in this field. First, the primary preparation methods of temperature/pH dual-responsive hydrogels, including chemical crosslinking, physical crosslinking, and hybrid crosslinking, are introduced and compared. Subsequently, the main structural design strategies, including microsphere, core–shell and layered structures, and their corresponding fabrication processes are systematically elucidated. Finally, the recent progress of temperature/pH dual-responsive hydrogels in biomedical applications is discussed, including drug delivery, cancer therapy, biosensing and diagnosis, tissue engineering and regenerative medicine, as well as wound healing. Based on the current research progress, this review also outlines the major challenges in the development of temperature/pH dual-responsive hydrogels, and presents perspectives on future research directions.

This study investigates the impact of the self-heating effect (SHE) on single-event transient (SET) sensitivity in triple-layer stacked nanosheet transistors, using technology computer-aided design (TCAD) simulations. The results demonstrate that SHE significantly elevates the channel lattice temperature under DC bias, leading to notable degradation in DC performance metrics, including the drive current (I_ON) and the on/off current ratio. By employing a finer time resolution in the AC simulation, we observed that the device reaches thermal equilibrium on a picosecond timescale. Crucially, SHE is found to exacerbate SET sensitivity markedly. Compared to simulations without SHE, the presence of self-heating increases both the peak transient current and the collected charge at the drain terminal following heavy-ion strikes. Furthermore, the transient response is shown to depend on the thermal history; longer pre-strike heating times amplify the SET peak magnitude, whereas longer cooling times attenuate it. These findings underscore the critical importance of co-optimizing thermal management and radiation hardening in the design of advanced nanosheet technologies.

In this work, the effects of heavy ion strike position, incident angle, linear energy transfer (LET) value, ambient temperature, bias conditions, and the synergistic effects of total dose irradiation on the single-event transient (SET) in silicon-germanium heterojunction bipolar transistors on silicon-on-insulator (SiGe-on-SOI HBTs) were investigated using TCAD simulations. It was demonstrated that, compared to the bulk SiGe HBT, the SiGe-on-SOI HBT exhibits lower transient current and less charge collection, indicating better resistance to SET. The SET response is more pronounced when heavy ions strike vertically from the emitter and base regions. Transient current and collected charge escalate with increasing incident angle, demonstrating a strong linear correlation with LET values. As the temperature decreases, the peak transient current increases, while the pulse duration decreases and the total collected charge diminishes. After total dose irradiation, the peak transient current in the SiGe-on-SOI HBT decreases, whereas the damage was more severe in the absence of irradiation. Under collector positive bias and positive bias, significant SET responses were observed, while cutoff bias and substrate bias exhibited better resistance to SET damage. These findings provide critical insights into radiation-hardened design strategies for the SiGe-on-SOI HBT.

This study systematically investigates the strain-modulated electronic and optical properties of a novel two-dimensional (2D) boron-carbon-nitrogen (B2C6N4) monolayer through first-principles calculations. The optimized BCN structure exhibits an orthorhombic lattice with anisotropic mechanical properties. Phonon dispersion and ab initio molecular dynamics simulations confirm dynamic and thermal stability under ambient conditions. The B2C6N4 monolayer possesses a indirect bandgap of 1.31 eV, with valence and conduction band edges straddling water redox potentials, enabling photocatalytic hydrogen evolution and oxygen production. Strain engineering (−3% to +3%) induces bidirectional bandgap modulation (1.18–1.46 eV), accompanied by shifts in band edge positions aligned with the Shockley-Queisser optimal range for photovoltaics. Anisotropic carrier mobility is observed, with electron mobility exceeding 4815 cm²/V/s along specific crystallographic directions. Polarization-dependent optical absorption reveals strong visible-light and ultraviolet responses. These findings position the BCN monolayer as a promising candidate for flexible optoelectronics, adaptive photocatalysis, and strain-engineered solar cells