The present research work based on the newly prepared organic-inorganic hybrid heterostructure will be exploited to develop a multifunctional device including non-volatile resistance switching memory devices, and ultraviolet (UV) light detection behavior for the first time based on p-PEDOT:PSS/i-BFO/n-ZnO junctions. Using a spray pyrolysis technique, n-type zinc oxide (ZnO) and i-type bismuth ferrite (BiFeO₃) thin film layers were prepared on the clean glass substrates at temperature 673 K. Using a spin coater method, the p-PEDOT:PSS were grown upon a bismuth ferrite (BiFeO₃) thin film with a constant spin velocity of 2000 rpm and heated at 363 K. The current (I)–voltage (V), photoresponse characteristics and resistive switching (RS) behavior of the fabricated p-PEDOT:PSS/i-BFO/n-ZnO hybrid devices were carried out. The device shows high photoresponsivity (R) of 0.001 285 A W⁻¹ and fast photoresponse switching speed with the measured rise and fall time of 493 and 970 ms respectively. Based on the electrical properties, a conductive filament formation/rupture mechanism is proposed to explain the observed RS characteristics.

In this research, we report the bipolar resistive switching (RS) behavior of NiO thin films at various substrate temperature between 300 °C to 400 °C. A non-vacuum spray pyrolysis method is adopted to deposit NiO thin film layers. The structural studies confirm that all the NiO thin films were polycrystalline in nature along with cubic structure. The micrograph analysis of the NiO thin film layers shows a homogeneous distribution of grain without voids and micro-cracks. The optical transmittance spectra reveal that NiO (375) sample exhibit maximum transparent (>60%) in the visible region. The NiO switching layers were sandwiched between bottom indium-doped tin oxide (ITO), and top silver (Ag) electrodes, and their RS behavior were examined. The fabricated ITO/NiO/Ag RS devices shows bipolar current (I)-voltage (V) behavior with calculated ON/OFF ratio of 1.5. Moreover, the observed RS bahaviour in the fabricated ITO/NiO/Ag devices was associated due to the formations and ruptures of conductive paths.

The recent research work focuses on the realization of ITO/ZnO/Ag-based multifunctional devices. The fabricated devices exhibits multi-task operations, including ultraviolet (UV) light detection and non-volatile resistive switching (RS) memory applications. The intermediate ZnO switching layers were deposited using the spin-coating technique at 2500 rpm. The structural analysis validates the presence of wurtzite structure along the c-axis. The morphological analysis reveals that the grains are uniformly distributed of the deposited thin films. The PL emission spectrum of the ZnO thin film shows highly intensive peak at 382 nm. The obtained ZnO thin film was formed onto ITO substrate which was sandwiched between top and bottom Ag electrodes. The current–voltage measurements (I–V) and ln I–V plots characteristics of the fabricated ITO/ZnO/Ag devices were examined for UV photoresponse (under dark and UV illumination), and resistive switching (RS) behavior. The fabricated device shows a stable resistive switching characteristics and UV photoresponse with photoresponsivity (R) value of 0.52 mA W⁻¹. The fabricated ITO/ZnO/Ag devices shows rise time 4.35 s and 9.25 s decay time respectively. The optical sensing mechanism of ITO/ZnO/Ag were explored by oxygen (O₂) adsorption/desorption processes in Ag/ZnO and ITO/ZnO junctions across the interface.