Linfeng Wei

Dr. Linfeng Wei

orcid

Research Focus & Metrics

Academic Career Length

3Years (2024-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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26 February 2024 in IEEE Transactions on Circuits and Systems II: Express Briefs
Verified
Journal Article
Closed access
TZTianyi Zhang
Tianyi Zhang
WLWenchang Li
Wenchang Li
JLJiapeng Li
Jiapeng Li
LWLinfeng Wei
Linfeng Wei
JLJian Liu
Jian Liu
Modern high-performance processing chips utilize on-chip temperature sensors to monitor the temperature. In addition to a small area and low power, there is a strong demand for high accuracy with low-cost calibration. This brief presents an accurate sensor that converts the thermal information contained in the current ratio of two subthreshold MOSFETs to duty cycle. The proportional operation ensures that the slope of the linear sensing relationship remains unaffected by process variation, thereby guaranteeing the achievement of one-point trimming. The dynamic slope compensation (DSC) method is proposed to improve sensor supply sensitivity. Implemented in a 0.153-μm CMOS process, the proposed sensor occupies only 1632 μm2 and consumes 0.7 μW at room temperature. The measured inaccuracy is +1.2/–1.0 ∘C (3σC) in –20∘C~120∘C after one-point calibration and systematic error removal. With the assistance of DSC, the sensor can achieve a supply sensitivity of 4.3 ∘C/V.

12 February 2024 in Microelectronics Journal
Verified
Journal Article
Open access
LWLinfeng Wei
Linfeng Wei
WLWenchang Li
Wenchang Li
TZTianyi Zhang
Tianyi Zhang
JLJian Liu
Jian Liu

26 May 2025 in Electronics
Verified
Journal Article
Open access
PDF file
LWLinfeng Wei
Linfeng Wei
WLWenchang Li
Wenchang Li
JLJian Liu
Jian Liu
TZTianyi Zhang
Tianyi Zhang
This paper presents a high-precision remote temperature-sensing chip designed for advanced computing systems that require high-precision thermal management. The parasitic resistance, beta compensation, and early voltage compensation are proposed to achieve accuracy compensation of remote temperature sensing, whether using discrete transistors or parasitic transistors. The chip completed the circuit and layout design in a 0.18 μm CMOS process, with a chip area of 0.33 mm2 and a supply voltage of 1.8 V. Post-layout simulation results showed that the chip achieves a temperature-sensing accuracy of ±0.25 °C within the temperature range of −55 °C to 125 °C when adopting discrete transistors and parasitic transistors for remote temperature measurement.