Motivated by the striking promise of quantum computation, Majorana bound states (MBSs) in solid-state systems have attracted wide attention in recent years. In particular, the wavefunction localisation of MBSs is a key feature and is crucial for their future implementation as qubits. Here we investigate the spatial and electronic characteristics of topological superconducting chains of iron atoms on the surface of Pb(110) by combining scanning tunnelling microscopy and atomic force microscopy. We demonstrate that the Fe chains are mono-atomic, structured in a linear manner and exhibit zero-bias conductance peaks at their ends, which we interpret as signature for a MBS. Spatially resolved conductance maps of the atomic chains reveal that the MBSs are well localised at the chain ends (≲25 nm), with two localisation lengths as predicted by theory. Our observation lends strong support to use MBSs in Fe chains as qubits for quantum-computing devices.

Dye-sensitized solar cells (DSSCs) which are also called Graetzel cells are a novel type of solar cells. Their advantages are mainly low cost production, low energy payback time, flexibility, performance also at diffuse light and multicolor options. DSSCs become more and more interesting since a huge variety of dyes including also natural dyes can be used as light harvesting elements which provide the charge carriers. A wide band gap semiconductor like TiO2 is used for charge separation and transport. Such a DSSC contains similarities to the photosynthetic apparatus. Therefore, we summarize current available knowledge on natural dyes that have been used in DSSCs which should provide reasonable light harvesting efficiency, sustainability, low cost and easy waste management. Promising natural compounds are carotenoids, polyphenols and chlorophylls

We present quantitative measurements of the work function of semiconductor and metal surfaces prepared in ultrahigh vacuum (UHV) using a combination of UHV noncontact atomic force microscopy and Kelvin probe force microscopy. High energetic and lateral resolution is achieved by using the second resonance frequency of the cantilever to measure the electrostatic forces, while the first resonance frequency is used to simultaneously obtain topographic images by the frequency modulation technique. Spatially resolved work-function measurements reveal a reduced work function in the vicinity of steps on highly oriented pyrolytic graphite. On the GaAs(110) surface it could be demonstrated that defect states in the forbidden band gap cause a local pinning of the Fermi level along monolayer steps. On p-WSe2(0001) work-function variations due to the Coulomb potential of single dopant sites were resolved.

We present a comprehensive three-dimensional analysis of Kelvin probe force microscopy of semiconductors. It is shown that high-resolution electronic defect imaging is strongly affected by free carrier electrostatic screening, and the finite size of the measuring tip. In measurements conducted under ambient conditions, defects that are not more then $2\text{nanometers}$ below the surface, and are at least $50\text{nanometers}$ apart can be imaged only if the tip-sample distance is not larger then $10\text{nanometers}$. Under ultrahigh vacuum conditions, when the tip-sample distance can be as small as $1\text{nanometer}$, it is shown that the tip-induced band bending is only around a few millivolts, and can be neglected for most practical purposes. Our model is compared to ultrahigh vacuum Kelvin probe force microscopy measurements of surface steps on GaP, and it is shown that it can be used to obtain local surface charge densities.