Yossi Rosenwaks

Prof. Yossi Rosenwaks

Dean, Faculty of Engineering, Tel-Aviv University

Research Focus & Metrics

Academic Career Length

32Years (1995-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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31 August 2004 in Physical Review B
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Journal Article
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YRYossi Rosenwaks
Yossi Rosenwaks
Rafi ShiklerRafi Shikler
Rafi Shikler
Thilo GlatzelThilo Glatzel
Thilo Glatzel
SSSascha Sadewasser
Sascha Sadewasser
We present a comprehensive three-dimensional analysis of Kelvin probe force microscopy of semiconductors. It is shown that high-resolution electronic defect imaging is strongly affected by free carrier electrostatic screening, and the finite size of the measuring tip. In measurements conducted under ambient conditions, defects that are not more then 2nanometers below the surface, and are at least 50nanometers apart can be imaged only if the tip-sample distance is not larger then 10nanometers. Under ultrahigh vacuum conditions, when the tip-sample distance can be as small as 1nanometer, it is shown that the tip-induced band bending is only around a few millivolts, and can be neglected for most practical purposes. Our model is compared to ultrahigh vacuum Kelvin probe force microscopy measurements of surface steps on GaP, and it is shown that it can be used to obtain local surface charge densities.

12 March 2003 in Physical Review Letters
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Journal Article
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MMMichel Molotskii
Michel Molotskii
AAAlex Agronin
Alex Agronin
PUPavel Urenski
Pavel Urenski
MSMaria Shvebelman
Maria Shvebelman
GRGil Rosenman
Gil Rosenman
YRYossi Rosenwaks
Yossi Rosenwaks
We observe a stringlike domain penetration from a ferroelectric surface deep into the crystal bulk induced by a high voltage atomic force microscope tip. The domains, which resemble channels of an electrical breakdown, nucleate under an electric field of around 107  V/cm at the ferroelectric surface, and grow throughout the crystal bulk where the external electric field is practically zero. A theory explaining the shape of the formed domains is presented. It shows that the driving force for the domain breakdown is the decrease of the total free energy of the system with increasing domain length.

16 December 2005 in Physical Review Letters
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Journal Article
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OTO. Tal
O. Tal
YRYossi Rosenwaks
Yossi Rosenwaks
YPY. Preezant
Y. Preezant
NTN. Tessler
N. Tessler
CCC. K. Chan
C. K. Chan
AKA. Kahn
A. Kahn
We investigate the density of states (DOS) for hole transport in undoped and doped amorphous organic films using high lateral resolution Kelvin probe force microscopy. Measurements are done on field effect transistors made of N,NI-diphenyl-N, NI-bis(1-naphthyl)-1,10-biphenyl–4,4II-diamine undoped or p doped with tetrafluoro-tetracyanoquinodimethane. We determine the DOS structure of the undoped material, including an anomalous peak related to interfaces between regions of different surface potential, the DOS doping-induced broadening, and doping-induced sharp peaks on the main DOS distribution.

28 July 2005 in Review of Scientific Instruments
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Journal Article
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ESE. Strassburg
E. Strassburg
ABAmir Boag
Amir Boag
YRYossi Rosenwaks
Yossi Rosenwaks
An efficient algorithm to restore the actual surface potential image from Kelvin probe force microscopy measurements of semiconductors is presented. The three-dimensional potential of the tip-sample system is calculated using an integral equation-based boundary element method combined with modeling the semiconductor by an equivalent dipole-layer and image-charge model. The derived point spread function of the measuring tip is then used to restore the actual surface potential from the measured image, using noise filtration and deconvolution algorithms. The model is then used to restore high-resolution Kelvin probe microscopy images of semiconductor surfaces.

31 August 2009 in Applied Physics Letters
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Journal Article
Closed access
EKE. Koren
E. Koren
YRYossi Rosenwaks
Yossi Rosenwaks
JAJ. E. Allen
J. E. Allen
EHE. R. Hemesath
E. R. Hemesath
LLL. J. Lauhon
L. J. Lauhon
We use Kelvin probe force microscopy and scanning photocurrent microscopy to measure the doping distribution along single phosphorous-doped silicon nanowire grown by the vapor-liquid-solid method. A nonlinear potential drop along biased silicon nanowires is detected both by measuring the surface potential directly via Kelvin probe force microscopy and by integrating the photocurrent measured by scanning photocurrent microscopy. These variations in the potential and field are further analyzed to extract the longitudinal dopant distribution along an individual silicon nanowire. The results show a very good agreement between the two methods to quantitatively detect potential, field, and doping variations within doped silicon nanowires.

18 May 2011 in Beilstein Journal of Nanotechnology
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Journal Article
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GEGeorge Elias
George Elias
Thilo GlatzelThilo Glatzel
Thilo Glatzel
EMErnst Meyer
Ernst Meyer
ASAlex Schwarzman
Alex Schwarzman
ABAmir Boag
Amir Boag
YRYossi Rosenwaks
Yossi Rosenwaks
The role of the cantilever in quantitative Kelvin probe force microscopy (KPFM) is rigorously analyzed. We use the boundary element method to calculate the point spread function of the measuring probe: Tip and cantilever. The calculations show that the cantilever has a very strong effect on the absolute value of the measured contact potential difference even under ultra-high vacuum conditions, and we demonstrate a good agreement between our model and KPFM measurements in ultra-high vacuum of NaCl monolayers grown on Cu(111). The effect of the oscillating cantilever shape on the KPFM resolution and sensitivity has been calculated and found to be relatively small.