This article presents a method for detecting the temperature distribution of two parallelized Silicon Carbide (SiC) MOSFETs. Two thermally sensitive electrical parameters (TSEPs), namely the on-state resistance ($R_{dson}$) and the threshold voltage ($V_{th}$), are introduced. A comparison of the temperatures interpolated by $V_{th}$ and $R_{dson}$ shows disparity, enabling the detection of individual junction temperatures. $V_{th}$ instability and its measurement are discussed for SiC devices. Experimental results show that, depending on the instability of the $V_{th}$ and the sensitivity of the two TSEPs at certain temperatures, a combination of different TSEPs could be a solution for extracting the maximum junction temperature of parallelized devices.