This article presents a method for detecting temperatures distribution of two Silicon Carbide (SiC) MOSFETs parallelized. Two Thermally Sensitive Electrical Parameters (TSEP), namely the on-state resistance (Rdson) and the threshold voltage (Vth), are introduced. Comparison of temperatures interpolated by Vth and Rdson shows disparity which can lead to individual junction temperature detection. Vth instability and its measurement are discussed for SiC devices. Experimental results show that depending on the instability of the Vth and the sensitivity of the two TSEPs at certain temperatures, the combination of different TSEPs could be a solution to extract maximum junction temperature of parallelized devices.