A highly-sensitive optical fiber surface-enhanced Raman scattering (SERS) sensor has been developed by interference lithography. While one facet of the optical fiber is patterned with silver-coated nanopillar array as a SERS platform, the other end of the probe is used, in a remote end detection, to couple the excitation laser into the fiber and send the SERS signal to the spectrometer. SERS performance of the probe is characterized using trans-1,2-bis(4-pyridyl)-ethylene (BPE) monolayer and an enhancement factor of 1.2 × 10⁷ can be achieved by focusing the laser directly onto the nanopillar array (front end detection). We also demonstrate that this probe can be used for in situ remote sensing of toluene vapor by the remote end detection. Such a fiber SERS probe shows great potential for molecular detection in various sensing applications.

We present electrically-injected MEMS-tunable vertical-cavity surface-emitting lasers with emission wavelengths below 800 nm. Operation in this wavelength range, near the oxygen A-band from 760–780 nm, is attractive for absorption-based optical gas sensing. These fully-monolithic devices are based on an oxide-aperture AlGaAs epitaxial structure and incorporate a suspended dielectric Bragg mirror for wavelength tuning. By implementing electrostatic actuation, we demonstrate the potential for tuning rates up to 1 MHz, as well as a wide wavelength tuning range of 30 nm (767–737 nm).

Titanium dioxide (TiO₂) is commonly used for photocatalytic decomposition of organic contaminants for the purpose of water purification. One promising method to enhance TiO₂ photocatalysis is the incorporation of surface plasmon resonance on its surface where photocatalytic reactions take place. Herein, a novel methodology using plasmonically tuned aluminum nanostructures to enhance the rate of photodecomposition of aqueous methyl orange is demonstrated. These nanostructures are tuned to the TiO₂ band gap in the UV regime and patterned on TiO₂-coated substrates using nanosphere lithography. Compared to a blank TiO₂ film, the plasmonics is found to enhance the initial TiO₂ photocatalytic rate by up to 10 times, and further enhancement is possible upon refinement of the plasmonic technology.

In multisection laser diodes, the amplitude or frequency modulation (AM or FM) efficiency can be improved using the gain lever effect. To study gain lever, InGaAs double quantum-well (DQW) edge-emitting lasers have been fabricated with integrated passive waveguides and dual sections providing a range of split ratios from 1:1 to 9:1. Both the electrical and the optical gain lever have been examined. An electrical gain lever with greater than 7-dB enhancement of AM efficiency was achieved within the range of appropriate dc biasing currents, but this gain dropped rapidly outside this range. We observed a 4-dB gain in the optical AM efficiency under nonideal biasing conditions. This value agreed with the measured gain for the electrical AM efficiency under similar conditions. We also examined the gain lever effect under large signal modulation for digital logic switching applications. To get a useful gain lever for optical gain quenched logic, a long control section is needed to preserve the gain lever strength and a long interaction length between the input optical signal and the lasing field of the diode must be provided. The gain lever parameter space has been fully characterized and validated against numerical simulations of a semi-3-D hybrid beam propagation method (BPM) model for the coupled electron-photon rate equation. We find that the optical gain lever can be treated using the electrical injection model, once the absorption in the sample is known.

We present a new x-ray detection technique based on optical measurement of the effects of x-ray absorption and electron hole pair creation in a direct band-gap semiconductor. The electron-hole pairs create a frequency dependent shift in optical refractive index and absorption. This is sensed by simultaneously directing an optical carrier beam through the same volume of semiconducting medium that has experienced an xray induced modulation in the electron-hole population. If the operating wavelength of the optical carrier beam is chosen to be close to the semiconductor band-edge, the optical carrier will be modulated significantly in phase and amplitude. This approach should be simultaneously capable of very high sensitivity and excellent temporal response, even in the difficult high-energy xray regime. At xray photon energies near 10 keV and higher, we believe that sub-picosecond temporal responses are possible with near single xray photon sensitivity. The approach also allows for the convenient and EMI robust transport of high-bandwidth information via fiber optics. Furthermore, the technology can be scaled to imaging applications. The basic physics of the detector, implementation considerations, and preliminary experimental data are presented and discussed.