In this study, a dynamically tunable terahertz device based on a VO₂–graphene hybrid metasurface is proposed, which realizes the dual functions of ultra-wideband absorption and efficient transmission through VO₂ phase transformation. At 345 K (metallic state), the device attains an absorption efficiency exceeding 90% (average 97.06%) in the range of 2.25–6.07 THz (bandwidth 3.82 THz), showing excellent absorption performance. At 318 K (insulated state), the device achieves 67.66–69.51% transmittance in the 0.1–2.14 THz and 7.51–10 THz bands while maintaining a broadband absorption of 3.6–5.08 THz (an average of 81.99%). Compared with traditional devices, the design breaks through the performance limitations by integrating phase change material control with 2D materials. The patterned graphene design simplifies the fabrication process. System analysis reveals that the device is polarization-insensitive and tunable via graphene Fermi energy and relaxation time. The device’s excellent temperature response and wide angular stability provide a novel solution for terahertz switching, stealth technology, and sensing applications.

In this article, we present a high-sensitivity narrow-band perfect graphene absorber that exhibits excellent tunability across multiple bands. The top layer of the absorber unit is composed of graphene material, and the shape is a square graphene layer with a ring structure and a square structure removed from the middle. A SiO₂ dielectric layer is located in the middle, and a layer of gold substrate exists at the bottom. This structure has generated five perfect absorption peaks at 6.08216 THz, 7.29058 THz, 9.34669 THz, 11.5471 THz, and 13.0441 THz, and the levels of absorption are 98.24%, 98.03%, 99.55%, 98.87%, and 99.99%, respectively. We have proved the advantages of our model by comparing the influence of different shapes of graphene on the absorption rate of the model. Then, we changed the relaxation time and Fermi energy level of graphene and other factors such as the refractive index to prove that our structure has good tunable performance. Finally, we calculated the sensitivity, and the sensitivity of this structure is as high as 4508.75 GHZ/RIU. Compared with previous articles, our article has more absorption peaks, a higher absorption efficiency, and a higher sensitivity. The absorber proposed in this paper shows great potential to contribute to high-sensitivity sensors, photoelectric detection, photoelectric communication, and other related fields.