Porous GaN distributed Bragg reflectors offer an opportunity to provide the high reflectance, lattice-matched components required for efficient GaN vertical cavity surface emitting lasers. The birefringence of these structures is, therefore, of key interest as it could be used to control the polarization of the emitted light. Here, we present a detailed analysis of the optical birefringence for both laterally etched, patterned structures and self-assembled radial porous structures. We correlate this with the 3D structure of the pores, which we measure through the use of FIB milling and serial block-face SEM imaging. This is a powerful method for imaging the internal nanostructure of the sample and allows the internal pore morphology to be viewed in a reconstruction of any 3D plane. We measure the birefringence of our porous GaN layers as $\mathrm{\Delta }n=0.14$ with a lower refractive index parallel to the pores (∥) than perpendicular to them (⟂). Using finite element modeling, we accurately reproduce the experimentally observed birefringence trends and find that this can be done by modeling GaN as a perfect dielectric. This indicates that the birefringence arises from the limited width across the pores. This also shows that standard modeling approaches can be used to design porous GaN birefringent devices effectively.

We analyze in-plane and out-of-plane texture and terahertz analysis of a YBa₂Cu₃O_7-δ (YBCO) film deposited by chemical solution deposition technique onto LaAlO₃ (100) substrate. X-ray diffraction reveals the presence of (00l) reflections for the YBCO phase. The out-of-plane texture, measured by a rocking curve, shows two sub-layers with Δω = 0.45° and 1.8°. The value of the c-axis fraction of the crystallites is 81%. Also, the in-plane texture was studied by ϕ–scan measurements of (102) reflection, displaying mostly a colony of c-axis oriented grains, and two colonies of a-axis oriented grains onto the YBCO surface. In addition, the temperature dependence of the magnetization measurement revealed a critical temperature of 90 K, typical for YBCO superconductor material. From the temperature-dependent optical conductivity of YBCO, we observe an absorption feature at ≈1.57 THz, which redshifts with increasing temperature.

Introducing magnetic dopants into topological insulators (TIs) provides a pathway to realizing novel quantum phenomena, including the quantum anomalous Hall effect (QAHE) and axionic states. One of the most commonly used $3d$ transition metal dopants is Mn, despite its known tendency to be highly mobile and to cause phase segregation. In this study, we present a detailed magnetotransport investigation of Mn-overdoped Bi₂Te₃ thin films using field-effect transistor architectures. Building on our previous structural investigations of these samples, we examine how high Mn content influences their electronic transport properties. From our earlier studies, we know that high Mn doping concentrations lead to the formation of secondary phases, which significantly alter weak antilocalization behavior and suppress topological surface transport. To probe the gate response of these doped films over extended areas, we fabricate field-effect transistor structures, and we observe uniform electrostatic control of conduction across the magnetic phase. Inspired by recent developments in intrinsic topological systems such as the MnTe-Bi₂Te₃ septuple-layer compounds, we explore the influence of embedded ferromagnetic chalcogenide inclusions as an alternative route to engineer magnetic topological states and potentially expand the operational temperature range of QAHE-enabled devices.